Polarization retention of thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene film capacitors

Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of +/- 20 V and 1 ms, respectively, over 200 h at 80 degrees C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memoryopen8

Recovery of remanent polarization of poly(vinylidene fluoride-co-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 mu C/cm(2) was obtained after annealing up to 185 degrees C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (similar to 150 degrees C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field. (C) 2007 American Institute of Physicsopen142

Development of the MICROMEGAS Detector for Measuring the Energy Spectrum of Alpha Particles by using a 241-Am Source

We have developed MICROMEGAS (MICRO MEsh GASeous) detectors for detecting {\alpha} particles emitted from an 241-Am standard source. The voltage applied to the ionization region of the detector is optimized for stable operation at room temperature and atmospheric pressure. The energy of {\alpha} particles from the 241-Am source can be varied by changing the flight path of the {\alpha} particle from the 241 Am source. The channel numbers of the experimentally-measured pulse peak positions for different energies of the {\alpha} particles are associated with the energies deposited by the alpha particles in the ionization region of the detector as calculated by using GEANT4 simulations; thus, the energy calibration of the MICROMEGAS detector for {\alpha} particles is done. For the energy calibration, the thickness of the ionization region is adjusted so that {\alpha} particles may completely stop in the ionization region and their kinetic energies are fully deposited in the region. The efficiency of our MICROMEGAS detector for {\alpha} particles under the present conditions is found to be ~ 97.3 %

Intel: Tick-Tock product development cadence

Thesis (S.M.)--Massachusetts Institute of Technology, System Design and Management Program, 2008.Includes bibliographical references (p. 124-142).This thesis investigates on changes in semiconductor industry's product development methodology by following Intel's product development from year 2000. Intel was challenged by customer's preference change, competitors new enhanced product, internet bubble burst economy, and miss steps in the business strategy. Dynamics of these challenges drove Intel to develop a new product strategy: Tick-Tock product cadence. The paper discusses reasons why Intel landed at the Tick-tock strategy and results how strong product portfolio Intel ended up constructing. The thesis further discusses how the new "Global Product Development" strategy evolves, which can take advantage of TickTock cadence and deliver it to the next level helped from the effective GPD and systems engineering deployment.by Cheolmin Park.S.M

Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of similar to 7.0 mu C/cm(2) and 8 V, respectively, with the temperature stability of up to 160 degrees C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with +/- 20 V gate voltage sweep. (C) 2008 American Institute of Physicsopen485

Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization

We observed the irreversible extinction of ferroelectric polarization in spun coated poly(vinylidene fluoride-co-trifluoroethylene) thin films upon melting and recrystallization. We investigate the alteration of the ferroelectric properties correlated with the preferred polymer crystal orientation with respect to the electrodes using grazing incident scattering, spectroscopy, and electron microscopes. Heat treatment above melting point gave rise to the significant reduction of the ferroelectric performance mainly caused by the modification of molecular orientation of polymer crystals whose c and b axes are perpendicular and parallel to the electrode surface, respectively, leading to almost zero effective electric field. (c) 2006 American Institute of Physicsopen464

Selective emitter using a screen printed etch barrier in crystalline silicon solar cell

The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO(3) (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 10(21) cm(−3) in the low sheet resistance (Rs) region and 7 × 10(19) cm(−3) in the high Rs region. Solar cells of 12.5 × 12.5 cm(2) in dimensions with a wet etch back selective emitter J(sc) of 37 mAcm(−2), open circuit voltage (V(oc)) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on V(oc) compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with J(sc) of 36.90 mAcm(−2), V(oc) of 625.7 mV, and efficiency of 17.60%

Meter-scale van der Waals films manufactured via one-step roll printing.

A weak van der Waals (vdW) force in layered materials enables their isolation into thin flakes through mechanical exfoliation while sustaining their intrinsic electronic and optical properties. Here, we introduce a universal roll-printing method capable of producing vdW multilayer films on wafer-to-meter scale. This process uses sequential exfoliation and transfer of layered materials from the powder sources to target substrates through a repeated rolling of a cylindrical metal drum. We achieve uniformly coated films with a library of vdW powders on various mechanically rigid and flexible substrates. The printed films are configured into different devices including light-emitting diodes and photodetectors. The presented technique offers substantial benefits in terms of cost efficiency and a low thermal budget while offering high material quality