Measuring The Flow Experience Of Players Playing Online Games

Nowadays, online games have become a highly profitable e-commerce application. Therefore, researchers increasingly believe that understanding online game player behavior is critical to the success of online game practitioners.The factors influencing the flow of online games are of major concern to academic researchers and online games practitioners. Drawing on the theory of flow, this study empirically explores how the interactivity and intrinsic beliefs impact flow experience, and how flow experience is related to replay intention. Then, confirmatory factor analysis is applied to test and the proposed research model is evaluated with partial least squares (SmartPLS 2.0). The results show that flow experience is a significant predictor ofreplay intention. Four antecedents to flow (telepresence, focused attention, skills and challenges) have positive influence on flow experience. Interactivity (social interactivity and human-machine interactivity) and intrinsic beliefs (perceived attractiveness, personal involvement) influence the antecedents of flow experience. Moreover, social interactivity has a stronger impact on the antecedents of flow experience than human-machine interactivity. This study finds that social interactivity is most crucial to online game success

Hafnium oxide-based ferroelectric thin-film transistor with a-InGaZnO channel fabricated at temperatures \u3c= 350°C

HfO2-based ferroelectric materials integrated with oxide-based thin-film transistors have been considered as potential candidates for back-end-of-line compatible ferroelectric field-effect transistors, which can be vertically stacked on silicon CMOS circuits to realize high-density neural network applications. However, the formation of ferroelectric orthorhombic phase in HfO2-based materials usually requires an annealing temperature of 400°C or higher. In this work, ferroelectric thin-film transistors (Fe-TFTs) were developed by monolithically integrating HfZrO2 (HZO) ferroelectric capacitors with amorphous indium-gallium-zinc oxide (a-IGZO) TFTs at a maximum processing temperature of 350°C on a glass substrate. A butterfly-shaped C-V curve was clearly observed in the low-temperature annealed metal-HZO-metal capacitor, indicating the formation of ferroelectricity in the HZO layer, as shown in Fig. 1. The positive and negative coercive voltages were 3 V and -2.4 V, respectively. The dielectric constant was 20.65. The field-effect mobility, threshold voltage, subthreshold swing and on/off current ratio of the a-IGZO TFT extracted from the transfer characteristics shown in Fig. 2 were 6.15 cm2V-1s-1, 1.5 V, 0.1 V/dec and 4.3´107, respectively. Fig. 3 shows the transfer hysteresis curves of the low-temperature Fe-TFTs in a metal-ferroelectric-metal-insulator-semiconductor configuration. The Fe-TFTs exhibited large hysteresis memory windows of 2.8 V and 3.8 V when the area ratios between ferroelectric capacitors and gate insulators (AFE / ADE) were 1/8 and 1/12, respectively. The result shows a great potential for back-end-of-line compatible memory applications. Please click Download on the upper right corner to see the full abstract

An Overall Purchasing Process Model of Internet Buyers: The Role of Regret in Electronic Commerce

This study focuses on the antecedents and consequences of Internet buyer regret in the overall purchasing process. We examine the roles that search effort, service-attribute evaluations, product-attribute evaluations and post-purchase price perceptions play in determining buyer regret and satisfaction in e-commerce. Furthermore, the study examines the consequences of regret and satisfaction in regard to purchasing intention. Survey data collected from 422 respondents were analyzed using structural equation modeling (SEM) with partial least squares (PLS-Graph 3.0) and support provided for the hypothesized links. These results show that greater search effort and lower evaluations of service, product and price lead to greater buyer regret and dissatisfaction; the consequences of regret include reduced satisfaction and less intention to repurchase. Based on the results, implications for online retailers, as well as suggestions for future research relating to Internet buyer regret, are discussed

P-type tin monoxide thin-film transistors on cellulose nanopaper substrates

Oxide-based thin-film transistors (TFTs) possess advantages such as relatively high mobility, low process temperature and good uniformity, which make them attractive for flexible electronics applications. Most flexible oxide-based TFTs reported today were made on plastic substrates. In this work, flexible inverted-staggered bottom-gate p-type tin monoxide (SnO) thin-film transistors (TFTs) were demonstrated on cellulose nanopaper substrates using a photolithography-compatible direct-fabrication approach. The paper substrate was formed by drop-casting suspension containing cellulose nanofibers and cellulose nanocrystals on a rigid carrier substrate. A buffer layer consisting of parylene, SiNx and SiO2 was then deposited to protect the paper substrate from processing gases and chemicals. The processing temperatures of the TFT were kept ≤ 200°C to ensure the paper substrate remained intact during the process. The channel, gate, source, and drain patterns were defined by using conventional photolithography techniques. Fig. 1(a) shows the micrograph of p-type SnO TFTs made on a cellulose nanopaper substrate. The channel width and length are 60 μm and 30 μm, respectively. Figs. 1(b), (c), and (d) illustrate the transfer characteristics, output characteristics and linear field-effect mobility as a function gate voltage of a p-type SnO TFT fabricated on a cellulose nanopaper substrate. The on-paper SnO TFT exhibits a field-effect mobility of 1.21 cm2V-1s-1, threshold voltage of 3.56 V, subthreshold swing of 2.36 V/dec and on/off current ratio of 2.06×103. Please click Download on the upper right corner to see the full abstract

Electrical performance of amorphous IGZO thin-film transistor on cellulose nanopaper substrate

Plastics are commonly used as substrates for flexible electronics today, but they cause significant impact to the environment. Paper has been considered as an alternative owing to their low cost, flexibility, biodegradability and recyclability. However, paper substrates are vulnerable to high temperature and/or wet processes. Therefore, most reported on-paper electronics were fabricated by using printing processes, transfer processes, and/or shadow-masking deposition techniques. In this work, amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) were demonstrated on cellulose nanopaper substrates via a photolithography-compatible direct-fabrication method. The paper substrate was formed by drop-casting suspension containing cellulose nanofibers and cellulose nanocrystals on a rigid carrier substrate. A buffer layer consisting of parylene, SiNx, SiO2 and Al2O3 was then deposited to protect the paper substrate against processing gases and chemicals. To avoid deterioration of the cellulose nanopaper substrate, a low-temperature process of £ 150°C was developed. Fig. 1(a) shows the micrograph of a-IGZO TFTs made on a cellulose nanopaper substrate. The channel width and length are 60 μm and 30 μm, respectively. Figs. 1(b), (c), and (d) illustrate the transfer characteristics, output characteristics and linear field-effect mobility as a function gate voltage of an a-IGZO TFT fabricated on a cellulose nanopaper substrate. The on-paper TFT exhibits a field-effect mobility mobility of 4.23 cm2V-1s-1, on/off current ratio of 2.17× 107, threshold voltage of 4.35 V and subthreshold swing of 0.695 V/dec. The result paves a way toward large-area-compatible and scalable flexible green electronics productions. Please click Download on the upper right corner to see the full abstract

Cultural Discourse in Taiwan. Ed. Chin-Chuan Cheng, I-Chun Wang, and Steven Tötösy de Zepetnek.

The collected volume Cultural Discourse in Taiwan — edited by Chin-Chuan Cheng, I-Chun Wang, and Steven Tötösy de Zepetnek and published by National Sun Yat-sen Uiniversity Press in 2009 — is intended as an addition to scholarship in the field of Taiwan Studies. The articles in the volume are in many aspects comparative and the topics discussed are in the context of literary and culture scholarship. At the same time, the volume is interdisciplinary as the articles cover historical perspectives, analyses of texts by Taiwan authors, and cultural discourse as related to Taiwan consciousness, language, and linguistic issues. Copyright release to the authors

Mining association language patterns using a distributional semantic model for negative life event classification

AbstractPurposeNegative life events, such as the death of a family member, an argument with a spouse or the loss of a job, play an important role in triggering depressive episodes. Therefore, it is worthwhile to develop psychiatric services that can automatically identify such events. This study describes the use of association language patterns, i.e., meaningful combinations of words (e.g., <loss, job>), as features to classify sentences with negative life events into predefined categories (e.g., Family, Love, Work).MethodsThis study proposes a framework that combines a supervised data mining algorithm and an unsupervised distributional semantic model to discover association language patterns. The data mining algorithm, called association rule mining, was used to generate a set of seed patterns by incrementally associating frequently co-occurring words from a small corpus of sentences labeled with negative life events. The distributional semantic model was then used to discover more patterns similar to the seed patterns from a large, unlabeled web corpus.ResultsThe experimental results showed that association language patterns were significant features for negative life event classification. Additionally, the unsupervised distributional semantic model was not only able to improve the level of performance but also to reduce the reliance of the classification process on the availability of a large, labeled corpus