Fabrication of photonic band-gap crystals

We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps. Careful fabrication has enabled us to define photonic crystals with 280 nm holes defined with 350 nm center to center spacings in GaAsP and GaAs epilayers. We construct these photonic crystals by transferring a submicron pattern of holes from 70-nm-thick polymethylmethacrylate resist layers into 300-nm-thick silicon dioxide ion etch masks, and then anisotropically angle etching the III-V semiconductor material using this mask. Here, we show the procedure used to generate photonic crystals with up to four lattice periods depth

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

We have investigated the wet thermal oxidation of AlAs in cylindrical geometry, a typical configuration for vertical-cavity surface-emitting lasers. Through both experiment and theoretical calculations, we demonstrate a significantly different time dependence for circular mesas from what has been reported in the literature both in studies of stripes and in a study of circular mesas. We attribute this different time dependence to the effect of geometry on the oxidation

Strain in wet thermally oxidized square and circular mesas

In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns

Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy

We have employed ballistic electron emission microscopy (BEEM) to study the energy positions in the conduction band of AlxGa1 – xAs. Epilayers of undoped AlxGa1 – xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The AlxGa1 – xAs layer thickness was varied from 100 to 500 Å to ensure probing of bulk energy levels. Different capping layers and surface treatments were explored to prevent surface oxidation and examine Fermi level pinning at the cap layer/AlxGa1 – xAs interface. All samples were metallized ex situ with a 100 Å Au layer so that the final BEEM structure is of the form Au/capping layer/AlxGa1 – xAs/bulk GaAs. Notably we have measured the Schottky barrier height for Au on AlxGa1 – xAs. We have also probed the higher lying band edges such as the X point at low Al concentrations and the L point at high Al concentrations. Variations of these critical energy positions with Al composition x were mapped out in detail and compared with findings from other studies. Local variations of these energy positions were also examined and found to be on the order of 30–50 meV. The results of this study suggest that BEEM can provide accurate positions for multiple energy levels in a single semiconductor structure

Renormalization in Coulomb gauge QCD

In the Coulomb gauge of QCD, the Hamiltonian contains a non-linear Christ-Lee term, which may alternatively be derived from a careful treatment of ambiguous Feynman integrals at 2-loop order. We investigate how and if UV divergences from higher order graphs can be consistently absorbed by renormalization of the Christ-Lee term. We find that they cannot.Comment: 23 pages, 26 figure

Lithographic band gap tuning in photonic band gap crystals

We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (> 95%) mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response

Lasers incorporating 2D photonic bandgap mirrors

Semiconductor lasers incorporating a 2D photonic lattice as a one end mirror in a Fabry-Perot cavity are demonstrated. The photonic lattice is a 2D hexagonal close-packed array with a lattice constant of 220 nm. Pulsed threshold currents of 110 mA were observed from a 180 μm laser

Two-dimensional photonic band-gap mirrors at 850 and 980 nm

Summary form only given. Photonic band-gap (PBG) crystals can be fabricated in semiconductor devices through the etching of patterns of holes in the device, resulting in a periodic dielectric structure. One of the more practical uses of photonic crystals in optoelectronic devices is for thin, high-reflectivity mirrors. The use of hexagonal arrays of etched circular holes results in a 2-D photonic band-gap mirror that can be tuned to a specific wavelength by varying the hole radius and the lattice spacing. 2-D mirror characterization is performed by evaluating the light emission from an active waveguide

Presymmetry beyond the Standard Model

We go beyond the Standard Model guided by presymmetry, the discrete electroweak quark-lepton symmetry hidden by topological effects which explain quark fractional charges as in condense matter physics. Partners of the particles of the Standard Model and the discrete symmetry associated with this partnership appear as manifestations of a residual presymmetry and its extension from matter to forces. This duplication of the spectrum of the Standard Model keeps spin and comes nondegenerated about the TeV scale.Comment: 6 pages, 11 figures. To be published in the proceedings of DPF-2009, Detroit, MI, July 2009, eConf C09072