Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements

10.1088/0268-1242/11/5/005Semiconductor Science and Technology115672-678SSTE

Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

10.1116/1.2141619Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films241133-140JVTA

Investigation of wet etching properties and annealing effects of Hf-based high-k materials

10.1149/1.2184929Journal of the Electrochemical Society1535G483-G491JESO

Global optimization for digital MOS circuits performance

10.1109/43.822628IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems191161-164ITCS

Performance spread optimization of MOS VLSI circuit by statistical parameter design

International Symposium on IC Technology, Systems and Applications864-6

Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric

10.1149/1.1642577Electrochemical and Solid-State Letters73F18-F20ESLE

Yield optimization by design centering & worst-case distance analysis

Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors289-290PIIP

Yield optimization by design centering & worst-case distance analysis

Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors289-290PIIP

Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

10.1063/1.1868077Applied Physics Letters8671-3APPL

A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application

10.1109/VLSIT.2007.4339764Digest of Technical Papers - Symposium on VLSI Technology156-157DTPT