Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain

The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO(3 )heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices

Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system

In this letter, we studied the polarization dependent current excited by near- and mid-infrared radiations in InAs nanowires patterned quasi two-dimensional structures. We observed a current with a predominated direction along the wires at normal incidence of mid-infrared radiation and attributed it to the ratchet effect. Photogalvanic effect induced by obliquely incident excitation is also observed. Under near-infrared excitation, however, the normal incident ratchet effect becomes insignificant and the linear photogalvanic effect at oblique incidence dominantly contributes to the electric current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610966

Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer

We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering (FLS) experiment for a cell with ZnO nanorod doped in only one poly (vinyl alcohol) (PVA) layer. When a dc voltage with a positive pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the transverse direction, which results in a higher diffraction efficiency. Conversely, when the dc voltage with a negative pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the longitudinal direction, which leads to a lower diffraction efficiency. A largest diffraction efficiency of about 9% is achieved in the ZnO nanorod doped liquid crystal cell

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 200

In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

The interface properties of GaNxAs1-x/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. The origin of the strain component epsilon(xy) is also discussed