Enhanced spontaneous emission rate from single InAs quantum dots in a photonic crystal nanocavity at telecom wavelengths

The authors demonstrate coupling at 1.3 micro m between single InAs quantum dots (QDs) and a mode of a two dimensional photonic crystal (PhC) defect cavity with a quality factor of 15 000. By spectrally tuning the cavity mode, they induce coupling with excitonic lines. They perform a time integrated and time-resolved photoluminescence and measure an eightfold increase in the spontaneous emission rate inducing a coupling efficiency of 96%. These measurements indicate the potential of single QDs in PhC cavities as efficient single-photon emitters for fiber-based quantum information processing applications. [on SciFinder (R)

Shape-engineered epitaxial InGaAs quantum rods for laser applications

We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measuring the photoluminescence and photoluminescence decay as a function of the rod length. Lasers based on a three-stack QR active region are demonstrated at room temperature, validating the applicability of the QRs in the real devices. ©2008 American Institute of Physic

Controlling Energy and Charge Environment of Single Excitons in a Photonic-Crystal Diode

Single quantum dots embedded inside a photonic crystal diode are studied as a function of the reverse bias. The applied electric field strongly enhances the emission from excitonic lines as compared to the background emission. ©2009 Optical Society of America. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 522600

Enhancement of the emission of single InAs quantum dashes in a 2.5d photonic crystal structure at 1550nm

The optical study of single quantum dashes located inside a 2.5D photonic crystal structure is performed. The enhancement of the emission is observed for quantum dash in resonance with a slow Bloch mode

Enhancement of the emission of single InAs quantum dashes in a 2.5d photonic crystal structure at 1550nm

The optical study of single quantum dashes located inside a 2.5D photonic crystal structure is performed. The enhancement of the emission is observed for quantum dash in resonance with a slow Bloch mode

Control of the spontaneous emission from a single quantum dash using a slow-light mode in a two-dimensional photonic crystal on a Bragg reflector

We demonstrate the coupling of a single InAs/InP quantum dash, emitting around 1.55 µm, to a slow-light mode in a two-dimensional photonic crystal on Bragg reflector. These surface addressable 2.5D photonic crystal band-edge modes present the advantages of a vertical emission and the mode area and localization may be controlled, leading to a less critical spatial alignment with the emitter. An increase in the spontaneous emission rate by a factor of 1.5-2 is measured at low temperature and is compared to the Purcell factor predicted by three-dimensional time-domain electromagnetic simulations

Enhancement of the recombination rate of inas quantum dots in a photonic crystal light emitting diode

InAs quantum dots emitting at 1.3 Jµm and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode

Control of the spontaneous emission from a single quantum dash using a slow-light mode in a two-dimensional photonic crystal on a Bragg reflector

We demonstrate the coupling of a single InAs/InP quantum dash, emitting around 1.55 µm, to a slow-light mode in a two-dimensional photonic crystal on Bragg reflector. These surface addressable 2.5D photonic crystal band-edge modes present the advantages of a vertical emission and the mode area and localization may be controlled, leading to a less critical spatial alignment with the emitter. An increase in the spontaneous emission rate by a factor of 1.5-2 is measured at low temperature and is compared to the Purcell factor predicted by three-dimensional time-domain electromagnetic simulations

Enhancement of the recombination rate of inas quantum dots in a photonic crystal light emitting diode

InAs quantum dots emitting at 1.3 Jµm and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode

Nanophotonic technologies for single-photon devices

The progress in nanofabrication has made possible the realization of optic nanodevices able to handle single photons and to exploit the quantum nature of single-photon states. In particular, quantum cryptography (or more precisely quantum key distribution, QKD) allows unconditionally secure exchange of cryptographic keys by the transmission of optical pulses each containing no more than one photon. Additionally, the coherent control of excitonic and photonic qubits is a major step forward in the field of solid-state cavity quantum electrodynamics, with potential applications in quantum computing. Here, we describe devices for realization of single photon generation and detection based on high resolution technologies and their physical properties. Particular attention will be devoted to the description of single-quantum dot sources based on photonic crystal microcavites optically and electrically driven: the electrically driven devices is an important result towards the realization of single photon source "on demand". A new class of single photon detectors, based on superconducting nanowires, the superconducting single-photon detectors (SSPDs) are also introduced: the fabrication techniques and the design proposed to obtain large area coverage and photon number-resolving capability are described