Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications

Microwave device jig characterization for ferromagnetic resonance induced spin Hall effect measurement in bilayer thin films

60-65Microwave device jig for evaluating magnetic thin films consists of two symmetrical radial copper pad sections each having panel mounted RF connector. A non resonant measurement method for obtaining spin Hall voltage across magnetic thin films using ferromagnetic resonance was developed, based on electrical impedance of thin film and copper pads of the microwave device jig both in contact with each other. A geometry is introduced, which provides good impedance match characteristics and is optimised for maximum power transmission. It also gives the flexibility in measurements for any orientation of thin film with respect to applied magnetic field. In this geometry, a quantitative study of the microwave device jig has been done by measuring spin Hall voltages in the frequency range 0.1-10 GHz for bilayer thin films. The experimentally recorded voltages can be fully ascribed to SHE detection due to microwave induced FMR

Influence of fabrication processes on transport properties of superconducting niobium nitride nanowires

Fabrication of niobium nitride (NbN) superconducting nanowires based on focused ion beam (FIB) milling and electron beam lithography (EBL) is presented. The NbN films were deposited using reactive magnetron sputtering. Argon-to-nitrogen ratio turned out to be a crucial factor in synthesizing high quality superconducting NbN. Critical temperatures (T-c) of around 15.5 K were measured for films with a thickness of around 10 nm. Zero-field-cooled magnetization was measured to optimize the superconducting properties of ultra thin NbN films. The transport behaviour was studied using conventional resistance vs temperature and current-voltage characteristics down to 2 K. Effect of gallium contamination on superconducting properties has been discussed. Whereas the various processing steps of standard EBL route do not have any significant impact on the superconducting transition temperature as well as on the transition width of nanowires, there is significant degradation of superconducting properties of nanowires prepared using FIB. This has been attributed to gallium ion implantation across the superconducting channel. Although the effect of gallium implantation may have technological limitations in designing fascinating single photon detector architectures, it provides some interesting low-dimensional superconducting properties