3 research outputs found
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas
Chemical stability and defect formation in CaHfO 3
Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO3 are found to be insulating, whereas cation-deficient CaHfO3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity