206 research outputs found
Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model
Solid-State Electronics426957-962SSEL
Experimentally observed deviations from the superposition principle in crystalline silicon solar cells at low illuminations
Solid State Electronics309919-925SSEL
A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
Solid State Electronics38101791-1798SSEL
Plasmodium falciparum pyruvate kinase as a novel target for antimalarial drug-screening
10.1016/j.tmaid.2006.01.015Travel Medicine and Infectious Disease52 SPEC. ISS.125-13
A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan
10.1016/0038-1101(94)90096-5Solid-State Electronics3711-7SSEL
Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm
Journal of Applied Physics8141992-2001JAPI
Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
Semiconductor Science and Technology139976-980SSTE
New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Annual Proceedings - Reliability Physics (Symposium)311-317ARLP
Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements
10.1088/0268-1242/11/5/005Semiconductor Science and Technology115672-678SSTE
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