30 research outputs found

    Evaluation of the effect of fat content of sunflower meal on rumen fungi growth and population by direct (quantitative competitive polymerase chain reaction) and indirect (dry matter and neutral detergent fibre disappearance) methods

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    The major aim of this study was to evaluate the effect of fat content of sunflower meal (150 and 30 g fat /kg dry matter, high and low fat, respectively) on population, growth and activity of rumen anaerobic fungi by using direct (quantitative competitive polymerase chain reaction, QC-PCR) and indirect (dry matter (DM) and neutral detergent fibre (NDF) disappearance in rumen fungi media culture for 12 days) methods. The results of QC-PCR showed that rumen anaerobic fungi population in the medium containing high fat sunflower meal was greater as compared to low fat sunflower meal (+0.14 vs. +0.10) (P<0.05). Also, disappearance of dry matter after 12 days incubation with rumen fungi will be 36.1 and 35.7 g/100 g DM for high and low fat sunflower meal, respectively) (P>0.05). High fat of sunflower meal caused increase in natural detergent fibre disappearance 12 days after culturing as compared to low fat sunflower meal (145.2 vs 139.2 mg/g dry matter, respectively) (P<0.05). Therefore, it appears that fat content of sunflower meal does not negatively affect the population, growth and activity of rumen fungi.Key words: Fat, sunflower meal, rumen fungi, quantitative competitive polymerase chain reaction, disappearance

    LTPS vs oxide backplanes for AMOLED displays: System design considerations and compensation techniques

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    The two major backplane technologies for AMOLED displays are LTPS and oxides. Despite their similarities, the differences are significant requiring intricate design considerations and compensation techniques to achieve good display uniformity and lifetime while eliminating second order effects associated with IR drop, ground bouncing, and parasitic capacitance. This paper presents a study in contrasts between LTPS and oxide backplane technologies from the standpoint of system design and compensation techniques. © 2014 Society for Information Display

    Thin film transistor circuits and systems

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    Providing a reliable and consolidated treatment of the principles behind large-area electronics, this book provides a comprehensive review of the design challenges associated with building circuits and systems from thin-film transistors. The authors describe the architecture, fabrication and design considerations for the principal types of TFT and their numerous applications. The practicalities of device non-ideality are also addressed and the specific design considerations necessitated by instabilities and non-uniformities in existing fabrication technologies. Containing device-circuit information, discussion of electronic solutions that compensate for material deficiencies, and design methodologies applicable to a wide variety of organic and inorganic disordered materials, this is an essential reference for all researchers, circuit and device engineers working on large-area electronics

    Oxide thin film transistor technology: Capturing device-circuit interactions

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    This paper presents the current status of oxide semiconductor technology for applications ranging from interactive displays to imaging systems with a strong focus on device-circuit interaction to compensate for material weaknesses and issues related to non-uniformity, instability, and persistent photoconductivity

    Transparent semiconducting oxide technology for touch free interactive flexible displays

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    Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental building blocks for a new generation of applications ranging from interactive displays and imaging to future electronic systems that are unconstrained by form factor. This makes the quest for high mobility materials processed at low temperatures even more compelling, to enable the layering of circuits and systems on plastic and possibly even paper substrates. Transparency is also an attractive feature that enables seamless embedding of electronics for the immersive ambient. This paper reviews the current status of the ubiquitous oxide semiconductor technology for flexible and transparent interactive displays, along with demonstrated examples of continuous thin film and nanowire systems for the transistor and sensor. Issues related to photo-sensing and active matrix operation are discussed along with solutions addressing the problem of threshold voltage instability and its compensation for fast recovery, particularly after light stress. Physics-based compact models for expedient design and simulation of analog and digital circuits are reviewed along with examples of key system building blocks. Finally we attempt to conceptualize a thin film transistor (TFT)-based fully heterogeneously integrated and autonomous system that can be realized using a combination of oxide and other technological routes

    Physico-Chemical Properties of Steam Treated Sugarcane Pith and some Roughages and Their Role in Ruminants Nutrition

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    On experiment was designed for evaluating the nutritienal characteristics and physico-chemical properties of steam treated sugarcane pith (19 bar, 3 min.) and some other roughages. Steam treatment resulted in a significant decreased (

    Indium oxides by reactive ion beam assisted evaporation: From material study to device application

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    Indium oxides were deposited by reactive ion beam assisted e-beam evaporation at room temperature. A material study was conducted through a variety of material characterization including crystal structure, electrical properties, optical properties, and chemical composition, along with an investigation of material properties as a function of primary deposition parameters such as ion flux and deposition rate. Implementing the developed semiconducting indium oxide as a channel material, the authors further demonstrated high-performance indium oxide thin-film transistors (TFTs) with conventional silicon dioxide gate dielectric derived by plasma-enhanced chemical vapor deposition (PECVD). The n -channel TFT has a threshold voltage of ∼2.0 V, a field-effect mobility of 33 cm2 /V s at a gate bias of 20 V, an ON/OFF current ratio of 108, and a subthreshold slope of 2.0 V/decade. The stability study displays a small threshold voltage shift of ∼0.6 V under a 60 h constant current stress condition. The TFT reported here has one of the best performance characteristics in terms of field-effect mobility, ON/OFF current ratio, OFF current and device stability, using conventional and large-area foundry-compatible PECVD gate dielectrics. The device performance coupled with PECVD dielectrics makes ion beam assisted e-beam evaporation derived indium oxide TFT a promising candidate for active matrix flat-panel displays. © 2009 American Vacuum Society

    Device-Circuit Interactions and Impact on TFT Circuit-System Design

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    This paper reviews the importance of device-circuit interactions (DCI) and its consideration when designing thin film transistor circuits and systems. We examine temperature- and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are then reviewed to show examples of how DCI is considered in the design of AMOLED displays. Other designs such as analog front-end and image sensors are also discussed, where alternate circuits should be designed to overcome the limitations of the intrinsic device properties

    Potential use of high-temperature and low-temperature steam treatment, sodium hydroxide and an enzyme mixture for improving the nutritional value of sugarcane pith

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    The effectiveness of different treatment methods to improve the nutritional value of the sugarcane by-products (pith or bagasse) has been evaluated. The treatment methods included a high-pressure steam treatment (HPST; 19 bar, 3 min), treating the products with sodium hydroxide, sulphuric acid plus an enzyme mixture, or low-temperature steam treatment (LTST) under different conditions. Gas production (GP), two-step in vitro digestibility (IVD) and in situ degradability (ISD) techniques were used to monitor the effectiveness of the treatments. HPST resulted in a significant increased in the total soluble sugar (TSS) content of unsteamed pith (USP), 20 vs. 123.75 mg/100 mL. Except for the enzyme treatment, the other treatments led to a significant improvement in the nutritional value of sugarcane by-products, as measured by the IVD method. LTST resulted in an increase in potential GP (B) at higher temperature, reaction time and amount of acid. The highest potential GP (110.92 mL/300 mg DM) was achieved under the conditions, 134 °C, 18 g acid/kg DM, 120 min, and the lowest (72.4 mL/300 mg DM) under the conditions, 121 °C, no acid, 40 min. In situ dry matter degradability (ISDMD) was unaffected by LTST. Dry matter digestibility results indicated that the optimal treatments for treating pith were HPST and NaOH, but that enzymes were ineffective. Furthermore, considering treatment cost (creating high-pressure are more expensive than low temperature treatments), potential environmental health problems and the relative improvement in the nutritional value of pith achieved by the LTST + acid method, compared to the HPST method (as measured using GP), these results suggested that the methods based on the use of LTST and acid (especially under harsher conditions), have the best potential to improve the nutritive value of sugarcane by-products.Keywords: Saccharum officinarum, steam, bagasse, raw or unsteam-treated pit
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