Surface Modification of III-V Compounds Substrates for Processing Technology

Semiconductor materials became a part of nowadays life due to useful applications caused by characteristic properties as variable conductivity and sensitivity to light or heat. Electrical properties of a semiconductor can be modified by doping or by the application of electric fields or light; and from this view, devices made from semiconductors can be used for amplification or energy conversion. The compound semiconductor materials from III-V class experienced a qualitative leap from promising potential to nowadays technologic environment. The III-V semiconductor compounds are the material bases for electronic and optoelectronic devices such as high-electron-mobility transistors (HEMT), bipolar heterostructure transistors, IR light-emitting diodes, heterostructure lasers, Gunn diodes, Schottky devices, photodetectors, and heterostructure solar cells for terrestrial and spatial operating conditions. Among III-V semiconductor compounds, gallium arsenide (GaAs) and gallium antimonide (GaSb) are of special interest as a substrate material due to the lattice parameter match to solid solutions (ternary and quaternary) whose band gaps cover a wide spectral range from 0.8 to 4.3 μm in the case of GaSb. The solid/solid interfaces could play a key part in the development of microelectronic device technology. In most of the cases, the initial surface of III-V compounds exposed to laboratory conditions is covered usually with native oxide layers. Various techniques for performing the surface cleaning process are used, e.g., controlled chemical etching, in situ ion sputtering, coupled with controlled annealing in vacuum and often these classic techniques are combined in order to prepare an eligible semiconductor surface to be exposed to a technological device chain. The evolution of surface native oxides in different cleaning procedures and the characteristics of as-prepared semiconductor surface were investigated by modern surface investigation techniques, i.e., X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) combined with electrical characterization. Surface preparation of semiconductors in particular for III-V compounds is a necessary requirement in device technology due to the existence of surface impurities and the presence of native oxides. The impurities can affect the adherence of ohmic and Schottky contacts and due to thermal decomposition of native oxides (e.g., GaSb) it also affect the interface metal/semiconductor. The practical experience reveals that the simple preparation of a surface is a nonrealistic expectation, i.e., surface preparation is a result of combined treatments, namely chemical etching and thermal treatment, ion beam sputtering and thermal reconstruction procedure

XPS Analysis of AuGeNi/Cleaved GaAs(110) Interface

The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen, were usually deposited with a 200 nm metallic layer in high vacuum conditions (better than 10−7 torr), by thermal evaporation, and annealed at a 430–450° Celsius temperature for 5 minutes. About 18 sessions of ion Ar surfaces etching and intermediate XPS measurements were performed in order to reveal the border of the metal/semiconductor interface. The atomic concentrations of the chemical elements have been approximated. Au4f, Ga3d, Ga2p, As3d, As2p, Ni2p3/2, Ge3d, O1s, and C1s spectral lines were recorded. The Au, Ge, and Ni have a homogenous distribution while Ga and As tend to diffuse to the surface. Oxygen is present in the first layers of the surface while carbon completely disappears after the second etching step. The existence of an Au-Ga alloy was detected and XPS spectra show only metal Ni and Ge within the layer and at the interface. We tried to perform a study about the depth chemical composition profile analysis of AuGeNi layer on cleaved n-GaAs(110) by X-Ray Photoelectron Spectroscopy (XPS) technique

The Photoluminescence and Vibrational Properties of Black Phosphorous Sheets Chemically/Electrochemically Functionalized in the Presence of Diphenylamine

In this work, new information concerning the optical properties of black phosphorus (BP) sheets chemically/electrochemically functionalized with diphenyl amine (DPA) and its macromolecular compound (poly(diphenylamine) (PDPA)) in the absence/presence of phosphotungstic acid (PTA) is reported. Raman scattering and FTIR spectroscopy studies indicate that the interaction of BP with PTA leads to the elimination of the PxOy layer onto the surface of the BP sheets. In the case of the chemical interaction of BP with DPA, the reaction product corresponds to DPA chemically functionalized BP sheets having an imino-phosphorane (IP) structure. The electrochemical oxidation of BP sheets chemically functionalized with DPA in the presence of PTA leads to an increase in the weight of P-N bonds as a consequence of the generation of PDPA doped with the PTA heteropolyanions, as shown by FTIR spectroscopy and Raman scattering. This process is evidenced by a shift of the Raman line from 362 cm−1 to 378 cm−1, assigned to the A1g mode. This change was explained by taking into account the compression of the layers containing P atoms, which is induced by PDPA macromolecular chains. The decrease in the intensity of the PL spectra of DPA as well as PDPA, in the presence of BP, indicates that BP acts as a PL quenching agent for these compounds. A preferential orientation of the PDPA doped with the PTA heteropolyanions on the surface of BP sheets is highlighted by the variation of the binding angle of the PDPA on the surface of BP sheets from 44.7° to 39.9°

Development of Zinc-Doped Hydroxyapatite by Sol-Gel Method for Medical Applications

Zinc- (Zn) doped hydroxyapatite (HAp) were prepared by sol-gel method. Zinc-doped hydroxyapatite (ZnHAp) and HAp were analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Rietveld analysis revealed that the HAp and 7ZnHAp powders obtained by sol-gel method have a monophasic hydroxyapatite structure belonging to the P63/m spatial group. The results obtained from the ultrasound characterization of HAp and ZnHAp are also presented in this study. The effect of zinc concentration on properties that were deduced from ultrasonic measurements are studied in the case of a significant zinc concentration (xZn = 0.07). From the values of the ultrasonic waves velocities were determined by the pairs of elastic coefficients of the suspensions (Young modulus E, Poisson coefficient ν), which have proven to be similar to those determined by other authors

Towards a Correlation between Structural, Magnetic, and Luminescence Properties of CeF3:Tb3+ Nanocrystals

In this study, we report on the structural, magnetic, and optical properties of Tb3+-doped CeF3 nanocrystals prepared via a polyol-assisted route, followed by calcination. X-ray diffraction analysis and electron microscopy investigations have shown the formation of a dominant Ce0.75F3 nanocrystalline phase (of about 99%), with a relatively uniform distribution of nanocrystals about 15 nm in size. Magnetization curves showed typical paramagnetic properties related to the presence of Ce3+ and Tb3+ ions. The magnetic susceptibility showed a weak inflexion at about 150 K, assigned to the cerium ions’ crystal field splitting. Under UV light excitation of the Ce3+ ions, we observed Tb3+ green luminescence with a quantum yield of about 20%

Photodegradation of Azathioprine in the Presence of Sodium Thiosulfate

The effect of sodium thiosulfate (ST) on the photodegradation of azathioprine (AZA) was analyzed by UV-VIS spectroscopy, photoluminescence (PL), FTIR spectroscopy, Raman scattering, X-ray photoelectron (XPS) spectroscopy, thermogravimetry (TG) and mass spectrometry (MS). The PL studies highlighted that as the ST concentration increased from 25 wt.% to 75 wt.% in the AZA:ST mixture, the emission band of AZA gradual downshifted to 553, 542 and 530 nm. The photodegradation process of AZA:ST induced: (i) the emergence of a new band in the 320–400 nm range in the UV-VIS spectra of AZA and (ii) a change in the intensity ratio of the photoluminescence excitation (PLE) bands in the 280–335 and 335–430 nm spectral ranges. These changes suggest the emergence of new compounds during the photo-oxidation reaction of AZA with ST. The invoked photodegradation compounds were confirmed by studies of the Raman scattering, the FTIR spectroscopy and XPS spectroscopy through: (i) the downshift of the IR band of AZA from 1336 cm−1 to 1331 cm−1, attributed to N-C-N deformation in the purine ring; (ii) the change in the intensity ratio of the Raman lines peaking at 1305 cm−1 and 1330 cm−1 from 3.45 to 4.57, as the weight of ST in the AZA:ST mixture mass increased; and (iii) the emergence of a new band in the XPS O1s spectrum peaking at 531 eV, which was associated with the C=O bond. Through correlated studies of TG-MS, the main key fragments of ST-reacted AZA are reported

Photoluminescence as a Valuable Tool in the Optical Characterization of Acetaminophen and the Monitoring of Its Photodegradation Reactions

In this work, new evidence for the photodegradation reactions of acetaminophen (AC) is reported by photoluminescence (PL), Raman scattering and FTIR spectroscopy. Under excitation wavelength of 320 nm, AC shows a PL band in the spectral range of 340–550 nm, whose intensity decreases by exposure to UV light. The chemical interaction of AC with the NaOH solutions, having the concentration ranging between 0.001 and 0.3 M, induces a gradual enhancement of the photoluminescence excitation (PLE) and PL spectra, when the exposure time of samples at the UV light increases until 140 min, as a result of the formation of p-aminophenol and sodium acetate. This behavior is not influenced by the excipients or other active compounds in pharmaceutical products as demonstrated by PLE and PL studies. Experimental arguments for the obtaining of p-aminophenol and sodium acetate, when AC has interacted with NaOH, are shown by Raman scattering and FTIR spectroscopy

Correction: Zgura et al. Cytotoxicity, Antioxidant, Antibacterial, and Photocatalytic Activities of ZnO–CdS Powders. Materials 2020, 13, 182

In the original publication [...

Cytotoxicity, Antioxidant, Antibacterial, and Photocatalytic Activities of ZnO–CdS Powders

In this work, ZnO–CdS composite powders synthesized by a simple chemical precipitation method were thoroughly characterized. The morphological, structural, compositional, photocatalytical, and biological properties of the prepared composites were investigated in comparison with those of the pristine components and correlated with the CdS concentration. ZnO–CdS composites contain flower-like structures, their size being tuned by the CdS amount added during the chemical synthesis. The photocatalytic activity of the composites was analyzed under UV irradiation using powders impregnated with methylene blue; the tests confirming that the presence of CdS along the ZnO in composites can improve the dye discoloration. The biological properties such as antioxidant capacity, antibacterial activity, and cytotoxicity of the ZnO, CdS, and ZnO–CdS composites were evaluated. Thus, the obtained composites presented medium antioxidant effect, biocidal activity against Escherichia coli, and no toxicity (at concentrations less than 0.05 mg/mL for composites with a low CdS amount) for human fibroblast cells. Based on these results, such composites can be used as photocatalytic and/or biocidal additives for photoactive coatings, paints, or epoxy floors, which in their turn can provide a cleaner and healthier environment