37,093 research outputs found
The Nature and Validity of the RKKY limit of exchange coupling in magnetic trilayers
The effects on the exchange coupling in magnetic trilayers due to the
presence of a spin-independent potential well are investigated. It is shown
that within the RKKY theory no bias nor extra periods of oscillation associated
with the depth of the well are found, contrary to what has been claimed in
recent works. The range of validity of the RKKY theory is also discussed.Comment: 10, RevTe
Bilayer graphene: gap tunability and edge properties
Bilayer graphene -- two coupled single graphene layers stacked as in graphite
-- provides the only known semiconductor with a gap that can be tuned
externally through electric field effect. Here we use a tight binding approach
to study how the gap changes with the applied electric field. Within a parallel
plate capacitor model and taking into account screening of the external field,
we describe real back gated and/or chemically doped bilayer devices. We show
that a gap between zero and midinfrared energies can be induced and externally
tuned in these devices, making bilayer graphene very appealing from the point
of view of applications. However, applications to nanotechnology require
careful treatment of the effect of sample boundaries. This being particularly
true in graphene, where the presence of edge states at zero energy -- the Fermi
level of the undoped system -- has been extensively reported. Here we show that
also bilayer graphene supports surface states localized at zigzag edges. The
presence of two layers, however, allows for a new type of edge state which
shows an enhanced penetration into the bulk and gives rise to band crossing
phenomenon inside the gap of the biased bilayer system.Comment: 8 pages, 3 fugures, Proceedings of the International Conference on
Theoretical Physics: Dubna-Nano200
Localized states at zigzag edges of bilayer graphene
We report the existence of zero energy surface states localized at zigzag
edges of bilayer graphene. Working within the tight-binding approximation we
derive the analytic solution for the wavefunctions of these peculiar surface
states. It is shown that zero energy edge states in bilayer graphene can be
divided into two families: (i) states living only on a single plane, equivalent
to surface states in monolayer graphene; (ii) states with finite amplitude over
the two layers, with an enhanced penetration into the bulk. The bulk and
surface (edge) electronic structure of bilayer graphene nanoribbons is also
studied, both in the absence and in the presence of a bias voltage between
planes.Comment: 4 pages, 5 figure
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both
experimentally and using a three-dimensional carrier dynamics simulation. A
uniform density of vacancies was formed over the optical absorption depth of
bulk GaAs samples by performing multi-energy implantations of arsenic ions (1
and 2.4MeV) and subsequent thermal annealing. In a series of THz emission
experiments the frequency of peak THz power was found to increase significantly
from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to
10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast
carrier dynamics to reproduce and explain these results. The effect of the
ion-induced damage was included in the simulation by considering carrier
scattering at neutral and charged impurities, as well as carrier trapping at
defect sites. Higher vacancy concentrations and shorter carrier trapping times
both contributed to shorter simulated THz pulses, the latter being more
important over experimentally realistic parameter ranges.Comment: 6 pages, 7 figure
Three-dimensional carrier-dynamics simulation of terahertz emission from photoconductive switches
A semi-classical Monte Carlo model for studying three-dimensional carrier
dynamics in photoconductive switches is presented. The model was used to
simulate the process of photoexcitation in GaAs-based photoconductive antennas
illuminated with pulses typical of mode-locked Ti:Sapphire lasers. We analyzed
the power and frequency bandwidth of THz radiation emitted from these devices
as a function of bias voltage, pump pulse duration and pump pulse location. We
show that the mechanisms limiting the THz power emitted from photoconductive
switches fall into two regimes: when illuminated with short duration (<40 fs)
laser pulses the energy distribution of the Gaussian pulses constrains the
emitted power, while for long (>40 fs) pulses, screening is the primary
power-limiting mechanism. A discussion of the dynamics of bias field screening
in the gap region is presented. The emitted terahertz power was found to be
enhanced when the exciting laser pulse was in close proximity to the anode of
the photoconductive emitter, in agreement with experimental results. We show
that this enhancement arises from the electric field distribution within the
emitter combined with a difference in the mobilities of electrons and holes.Comment: 7 pages, 7 figure
Exponential behavior of the interlayer exchange coupling across non-magnetic metallic superlattices
It is shown that the coupling between magnetic layers separated by
non-magnetic metallic superlattices can decay exponentially as a function of
the spacer thickness , as opposed to the usual decay. This effect
is due to the lack of constructive contributions to the coupling from extended
states across the spacer. The exponential behavior is obtained by properly
choosing the distinct metals and the superlattice unit cell composition.Comment: To appear in Phys. Rev.
Phenomenological study of the electronic transport coefficients of graphene
Using a semi-classical approach and input from experiments on the
conductivity of graphene, we determine the electronic density dependence of the
electronic transport coefficients -- conductivity, thermal conductivity and
thermopower -- of doped graphene. Also the electronic density dependence of the
optical conductivity is obtained. Finally we show that the classical Hall
effect (low field) in graphene has the same form as for the independent
electron case, characterized by a parabolic dispersion, as long as the
relaxation time is proportional to the momentum.Comment: 4 pages, 1 figur
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