3 research outputs found
Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor
We show simultaneous p and n type carrier injection in bilayer graphene
channel by varying the longitudinal bias across the channel and the top gate
voltage. The top gate is applied electrochemically using solid polymer
electrolyte and the gate capacitance is measured to be 1.5 , a
value about 125 times higher than the conventional SiO back gate
capacitance. Unlike the single layer graphene, the drain-source current does
not saturate on varying the drain-source bias voltage. The energy gap opened
between the valence and conduction bands using top and back gate geometry is
estimated.Comment: 16 pages, 6 figure
Electronic properties of bilayer and multilayer graphene
We study the effects of site dilution disorder on the electronic properties
in graphene multilayers, in particular the bilayer and the infinite stack. The
simplicity of the model allows for an easy implementation of the coherent
potential approximation and some analytical results. Within the model we
compute the self-energies, the density of states and the spectral functions.
Moreover, we obtain the frequency and temperature dependence of the
conductivity as well as the DC conductivity. The c-axis response is
unconventional in the sense that impurities increase the response for low
enough doping. We also study the problem of impurities in the biased graphene
bilayer.Comment: 36 pages, 42 figures, references adde