64 research outputs found
Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides
Efficient heat dissipation to the substrate is crucial for optimal device
performance in nanoelectronics. We develop a theory of electronic thermal
boundary conductance (TBC) mediated by remote phonon scattering for the
single-layer transition metal dichalcogenide (TMD) semiconductors MoS and
WS, and model their electronic TBC with different dielectric substrates
(SiO, HfO and AlO). Our results indicate that the
electronic TBC is strongly dependent on the electron density, suggesting that
it can be modulated by the gate electrode in field-effect transistors, and this
effect is most pronounced with AlO. Our work paves the way for the
design of novel thermal devices with gate-tunable cross-plane heat-dissipative
properties.Comment: 9 pages, 4 figure
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