Nonleptonic two-body B-decays including axial-vector mesons in the final state

We present a systematic study of exclusive charmless nonleptonic two-body B decays including axial-vector mesons in the final state. We calculate branching ratios of B\to PA, VA and AA decays, where A, V and P denote an axial-vector, a vector and a pseudoscalar meson, respectively. We assume naive factorization hypothesis and use the improved version of the nonrelativistic ISGW quark model for form factors in B\to A transitions. We include contributions that arise from the effective \Delta B=1 weak Hamiltonian H_{eff}. The respective factorized amplitude of these decays are explicitly showed and their penguin contributions are classified. We find that decays B^-to a_1^0\pi^-,\barB^0\to a_1^{\pm}\pi^{\mp}, B^-\to a_1^-\bar K^0, \bar B^0\to a_1^+K^-, \bar B^0\to f_1\bar K^0, B^-\to f_1K^-, B^-\to K_1^-(1400)\etap, B^-\to b_1^-\bar K^{0}, and \bar B^0\to b_1^+\pi^-(K^-) have branching ratios of the order of 10^{-5}. We also study the dependence of branching ratios for B \to K_1P(V,A) decays (K_1=K_1(1270),K_1(1400)) with respect to the mixing angle between K_A and K_B.Comment: 28 pages, 2 tables and one reference added, notation changed in appendices, some numerical results and abstract correcte

Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor

Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many body state that forms a spin as well as orbital singlet by virtual exchange with the leads, to a pure SU(2) orbital ground state, as a function of magnetic field. The small size and the s-like orbital symmetry of the ground state of the dopant, make it a model system in which the magnetic field only couples to the spin degree of freedom and allows for observation of this SU(4) to SU(2) transition.Comment: 12 pages, 10 figures, accepted for publication in Physical Review Letter

Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.Comment: 7 pages, 6 figure

Dynamical description of the buildup process in resonant tunneling: Evidence of exponential and non-exponential contributions

The buildup process of the probability density inside the quantum well of a double-barrier resonant structure is studied by considering the analytic solution of the time dependent Schr\"{o}dinger equation with the initial condition of a cutoff plane wave. For one level systems at resonance condition we show that the buildup of the probability density obeys a simple charging up law, $| \Psi (\tau) / \phi | =1-e^{-\tau /\tau_0},$ where $\phi$ is the stationary wave function and the transient time constant $\tau_0$ is exactly two lifetimes. We illustrate that the above formula holds both for symmetrical and asymmetrical potential profiles with typical parameters, and even for incidence at different resonance energies. Theoretical evidence of a crossover to non-exponential buildup is also discussed.Comment: 4 pages, 2 figure

Electric-field tuning of the valley splitting in silicon corner dots

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~\mu \text{eV}$ to $610~\mu \text{eV}$ with a slope of $-45\pm 3~\mu \text{eV/V}$ (or equivalently a slope of $-48\pm 3~\mu \text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37

Strain control of superlattice implies weak charge-lattice coupling in La0.5_{0.5}Ca0.5_{0.5}MnO3_3

We have recently argued that manganites do not possess stripes of charge order, implying that the electron-lattice coupling is weak [Phys Rev Lett \textbf{94} (2005) 097202]. Here we independently argue the same conclusion based on transmission electron microscopy measurements of a nanopatterned epitaxial film of La$_{0.5}$Ca$_{0.5}$MnO$_3$. In strain relaxed regions, the superlattice period is modified by 2-3% with respect to the parent lattice, suggesting that the two are not strongly tied.Comment: 4 pages, 4 figures It is now explained why the work provides evidence to support weak-coupling, and rule out charge orde