63 research outputs found

    Interface and Composition Analysis on Perovskite Solar Cells.

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    Organometal halide (hybrid) perovskite solar cells have been fabricated following four different deposition procedures and investigated in order to find correlations between the solar cell characteristics/performance and their structure and composition as determined by combining depth-resolved imaging with time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray photoelectron spectroscopy (XPS), and analytical scanning transmission electron microscopy (STEM). The interface quality is found to be strongly affected by the perovskite deposition procedure, and in particular from the environment where the conversion of the starting precursors into the final perovskite is performed (air, nitrogen, or vacuum). The conversion efficiency of the precursors into the hybrid perovskite layer is compared between the different solar cells by looking at the ToF-SIMS intensities of the characteristic molecular fragments from the perovskite and the precursor materials. Energy dispersive X-ray spectroscopy in the STEM confirms the macroscopic ToF-SIMS findings and allows elemental mapping with nanometer resolution. Clear evidence for iodine diffusion has been observed and related to the fabrication procedure.We acknowledge Lucio Cinà, Simone Casaluci, Stefano Razza and Narges Yaghoobi Nia for the technical support, “Polo Solare Organico” Regione Lazio, the “DSSCX” MIUR-PRIN2010 and FP7 ITN “Destiny” for funds. G.D., S.C. and C.D. acknowledge funding from ERC under grant number 259619 PHOTO EM. C.D. acknowledges financial support from the EU under grant number 312483 ESTEEM2.This is the final version of the article. It was first available from ACS via http://dx.doi.org/10.1021/acsami.5b0803

    Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics.

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    Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates

    Potassium- and Rubidium-Passivated Alloyed Perovskite Films: Optoelectronic Properties and Moisture Stability.

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    Halide perovskites passivated with potassium or rubidium show superior photovoltaic device performance compared to unpassivated samples. However, it is unclear which passivation route is more effective for film stability. Here, we directly compare the optoelectronic properties and stability of thin films when passivating triple-cation perovskite films with potassium or rubidium species. The optoelectronic and chemical studies reveal that the alloyed perovskites are tolerant toward higher loadings of potassium than rubidium. Whereas potassium complexes with bromide from the perovskite precursor solution to form thin surface passivation layers, rubidium additives favor the formation of phase-segregated micron-sized rubidium halide crystals. This tolerance to higher loadings of potassium allows us to achieve superior luminescent properties with potassium passivation. We also find that exposure to a humid atmosphere drives phase segregation and grain coalescence for all compositions, with the rubidium-passivated sample showing the highest sensitivity to nonperovskite phase formation. Our work highlights the benefits but also the limitations of these passivation approaches in maximizing both optoelectronic properties and the stability of perovskite films.Engineering and Physical Sciences Research Council (grant number: EP/M005143/1

    Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation

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    Efficient semi-transparent solar cells can trigger the adoption of building integrated photovoltaics. Halide perovskites are particularly suitable in this respect owing to their tunable bandgap. Main drawbacks in the development of transparent perovskite solar cells are the high Voc deficit and the difficulties in depositing thin films over large area substrates, given the low solubility of bromide and chloride precursors. In this work, we develop a 2D and passivation strategies for the high band-gap Br perovskite able to reduce charge recombination and consequently improving the open-circuit voltage. We demonstrate 1cm 2 perovskite solar cells with Voc up to 1.73 V (1.83 eV QFLS) and a PCE of 8.2%. The AVT exceeds 70% by means of a bifacial light management and a record light utilization efficiency of 5.72 is achieved, setting a new standard for transparent photovoltaics. Moreover, we show the high ceiling of our technology towards IoT application due to a bifaciality factor of 87% along with 17% PCE under indoor lighting. Finally, the up-scaling has been demonstrated fabricating 20cm 2 -active area modules with PCE of 7.3% and Voc per cell up to 1.65V

    Maximizing and stabilizing luminescence from halide perovskites with potassium passivation

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    Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability2 (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield—a quantity that must be maximized to obtain high efficiency—remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.M.A.-J. thanks Nava Technology Limited and Nyak Technology Limited for their funding and technical support. Z.A.-G. acknowledges funding from a Winton Studentship, and ICON Studentship from the Lloyd’s Register Foundation. This project has received funding from the European Union’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement number PIOF-GA-2013-622630, the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement number 756962), and the Royal Society and Tata Group (UF150033). We thank the Engineering and Physical Sciences Research Council (EPSRC) for support. XMaS is a mid-range facility at the European Synchrotron Radiation Facility supported by the EPSRC and we are grateful to the XMaS beamline team staff for their support. We thank Diamond Light Source for access to beamline I09 and staff member T.-L. Lee as well as U. Cappel for assistance during the HAXPES measurements. S.C., C.D. and G.D. acknowledge funding from the ERC under grant number 25961976 PHOTO EM and financial support from the European Union under grant number 77 312483 ESTEEM2. M.A. thanks the president of the UAE’s Distinguished Student Scholarship Program, granted by the Ministry of Presidential Affairs. H.R. and B.P. acknowledge support from the Swedish research council (2014-6019) and the Swedish foundation for strategic research. E.M.H. and T.J.S. were supported by the Netherlands Organization for Scientific Research under the Echo grant number 712.014.007
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