14 research outputs found
Comportamento produtivo e características pós-colheita de híbridos comerciais de melão amarelo, cultivados nas condições do litoral do Ceará
Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices
Uso de misturas químicas para a manutenção da firmeza de banana 'Prata' minimamente processada
Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology
Regulating Infrared Photoresponses in Reduced Graphene Oxide Phototransistors by Defect and Atomic Structure Control
Defects play significant roles in properties of graphene and related device performances. Most studies of defects in graphene focus on their influences on electronic or luminescent optical properties, while controlling infrared optoelectronic performance of graphene by defect engineering remains a challenge. In the meantime, pristine graphene has very low infrared photoresponses of similar to 0.01 A/W due to fast photocarrier dynamics. Here we report regulating infrared photoresponses in reduced graphene oxide phototransistors by defect and atomic structure control for the first time. The infrared optoelectronic transport and photocurrent generation are significantly influenced and well controlled by oxygenous defects and structures in reduced graphene oxide. Moreover, remarkable infrared photoresponses are observed in photoconductor devices based on reduced graphene oxide with an external responsivity of similar to 0.7 A/W at least over one order of magnitude higher than that from pristine graphene. External quantum efficiencies of infrared devices reach ultrahigh values of similar to 97%, which to our knowledge is one of the best efficiencies for infrared photoresponses from nonhybrid, pure graphene or graphene-based derivatives. The flexible infrared photoconductor devices demonstrate no photoresponse degradation even after 1000 bending tests. The results open up new routes to control optoelectronic behaviors of graphene for high-performance devices