17 research outputs found
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Dynamics of Wet Oxidation of High-AL-Content III-V Materials
Oxidation of layers of high-Al-content III-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELS) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETS. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
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Plasma chemistry dependent ECR etching of GaN
Electron cyclotron resonance (ECR) etching of GaN in Cl{sub 2}/H{sub 2}/Ar, C1{sub 2}/SF{sub 6}/Ar, BCl{sub 3}/H{sub 2}/Ar and BCl{sub 3}/SF{sub 6}/Ar plasmas is reported as a function of percent H{sub 2} and SF{sub 6}. GaN etch rates were found to be 2 to 3 times greater in Cl{sub 2}/H{sub 2}/Ar discharges than in BCl{sub 3}/H{sub 2}/Ar discharges independent of the H{sub 2} concentration. In both discharges, the etch rates decreased as the H{sub 2} concentration increased above 10%. When SF{sub 6} was substituted for H{sub 2}, the GaN etch rates in BCl{sub 3}-based plasmas were greater than those for the Cl{sub 2}-based discharges as the SF{sub 6} concentration increased. GaN etch rates were greater in Cl{sub 2}/H{sub 2}/Ar discharges as compared to Cl{sub 2}SF{sub 6}/Ar discharges whereas the opposite trend was observed for BCl{sub 3}-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively
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Interfacial arsenic from wet oxidation of Al{sub x}Ga{sub 1-X}As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication
Three important oxidation regimes have been identified in the temporal evolution of the wet thermal oxidation of Al{sub x}Ga{sub 1-x}As (1 {ge} x {ge} 0.90) on GaAs: (1) oxidation of Al and Ga in the Al{sub x}Ga{sub 1-x}As alloy to form an amorphous oxide layer, (2) oxidative formation and elimination of elemental As (both crystalline and amorphous) and of amorphous As{sub 2}O{sub 3}, and (3) crystallization of the oxide film. Residual As can result in up to a 100-fold increase in leakage current and a 30% increase in the dielectric constant and produce strong Fermi-level pinning and high leakage currents at the oxidized Al{sub x}Ga{sub 1-x}As/GaAs interface. The presence of thermodynamically-favored interfacial As may impose a fundamental limitation on the application of AlGaAs wet oxidation for achieving MIS devices in the GaAs material system
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Quartz Channel Fabrication for Electrokinetically Driven Separations
For well resolved electrokinetic separation, we L tilize crystalline quartz to micromachine a uniformly packe Q&iKLmnel. Packing features are posts 5 Vm on a side with:} pm spacing and etched 42 Vm deep. In addition to anisotropic wet etch characteristics for micromachining, quartz propmties are compatible with chemical soiutioits, ekctrokinetic high voltage operation, and stationary phase film depositions. To seal these channels, we employ a room temperature silicon-oxynhride deposition to forma membrane, that is subsequently coated for mechanical stability. Using this technique, particulate issues and global warp, that make large area wafer bon ding methods difficult, are avoided, and a room temperature process, in contrast to high temperature bonding techniques, accommodate preprocessing of metal films for electrical interconnect. After sealing channels, a number of macro-assembly steps are required to attach a micro-optical detection system and fluid interconnects. Keywords: microcharmel, integrated channel, micromachined channel, packed channel, electrokinetic channel, eleetrophoretic channe
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Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications
The increased demand for portable electronics has lead to the need for higher performance and efficiency. Devices operating at less than 50 {micro}W of power are defined as ultra-low-power (ULP) devices. New progress has been achieved on InP/InGaAs HBT and InAIAs/InGaAs HBT optimized for ULP applications. f{sub T} values of 2.2 GHz, and f{sub MAX} values of 20 GHz have been obtained for HBTs operating at less than 40 {micro}W. Current gain is greater than 45 with the device operating at less than 20 {micro}A on a 2.5 x 5 {micro}m{sup 2} device. These devices have been significantly improved over the previously reported MOCVD grown InP/InGaAs ULP HBT which has f{sub MAX} of 10 GHz operating in the ultra-low-power level. The improvements have been attributed to the reduction of base dopant diffusion associated with Zn doping