Method of sputter etching a surface

A surface is textured by co-sputter etching with a target and a seed material with the surface at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion

Low dose irradiation creep of pure nickel. [17 or 15 MeV deuterons]

A detailed climb-controlled glide model of low dose irradiation creep has been developed to rationalize irradiation creep data of pure nickel irradiated in a light ion irradiation creep apparatus. Experimental irradiation creep data were obtained to study the effects of initial microstructure and stress on low dose irradiation creep in pure nickel. Pure nickel specimens (99.992% Ni), with three different microstructures, were irradiated with 17 or 15 MeV deuterons at 473 K and stresses ranging from 0.35 to 0.9 of the unirradiated yield stress. Transmission electron microscopy revealed that the microstructure following irradiation to 0.05 dpa consisted of a high density of small dislocation loops, some small voids and network dislocations. The creep model predicted creep rates proportional to the mobile dislocation density and a comparison of experimental irradiation creep rates as a function of homologous stress revealed a dependence on initial microstructure of the magnitude predicted by the measured dislocation densities. The three microstructures that were irradiated consisted of 85% and 25% cold-worked Ni specimens and well-annealed Ni specimens. A weak stress dependence of irradiation creep was observed in 85% cold-worked Ni in agreement with experimental determinations of the stress dependence of irradiation creep by others. The weak stress dependence was shown to be a consequence of the stress independence of the dislocation climb velocity and the weak stress dependence of the barrier removal process. The irradiation creep rate was observed to be proportional to the applied stress. This linear stress dependence was suggested to be due to the stress dependence of the mobile dislocation density. 101 references, 27 figures, 11 tables

Low dose irradiation creep of pure nickel. [17 or 15 MeV deuterons]

A detailed climb-controlled glide model of low dose irradiation creep has been developed to rationalize irradiation creep data of pure nickel irradiated in a light ion irradiation creep apparatus. Experimental irradiation creep data were obtained to study the effects of initial microstructure and stress on low dose irradiation creep in pure nickel. Pure nickel specimens (99.992% Ni), with three different microstructures, were irradiated with 17 or 15 MeV deuterons at 473 K and stresses ranging from 0.35 to 0.9 of the unirradiated yield stress. Transmission electron microscopy revealed that the microstructure following irradiation to 0.05 dpa consisted of a high density of small dislocation loops, some small voids and network dislocations. The creep model predicted creep rates proportional to the mobile dislocation density and a comparison of experimental irradiation creep rates as a function of homologous stress revealed a dependence on initial microstructure of the magnitude predicted by the measured dislocation densities. The three microstructures that were irradiated consisted of 85% and 25% cold-worked Ni specimens and well-annealed Ni specimens. A weak stress dependence of irradiation creep was observed in 85% cold-worked Ni in agreement with experimental determinations of the stress dependence of irradiation creep by others. The weak stress dependence was shown to be a consequence of the stress independence of the dislocation climb velocity and the weak stress dependence of the barrier removal process. The irradiation creep rate was observed to be proportional to the applied stress. This linear stress dependence was suggested to be due to the stress dependence of the mobile dislocation density. 101 references, 27 figures, 11 tables

Thermal conductivities of thin, sputtered optical films

The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

Analysis on the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites

Ti{sub 3}SiC{sub 2}, a compound in the ternary Ti-Si-C system, is reported to be ductile. This paper reports the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites involving either combustion synthesis or by displacement reaction, respectively. Onset of exothermic reaction temperatures were determined using Differential Thermal Analysis (DTA). Phases present after the exothermic temperatures were analyzed by X-Ray diffraction. Based on these observations, a route to formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites is proposed for the two`s thesis methods

Synthesis and properties of nanostructures formed by sputter deposition

Nanoscale grain structures can be created in many materials by high rate sputter deposition upon an appropriate substrate. By controlling the sputtering parameters of substrate temperature, deposition rate, and substrate bias, the scale of microstructure can vary from amorphous to grain sizes typical of conventionally treated material. The morphology and size of the microstructure will also be controlled by post-deposition heat treatment, particularly in the heat treatment of amorphous and metastable phases. Examples are given of nanostructural development in sputter-deposited pure metals, stainless steel alloys, and intermetallic compounds. Some properties of these nanostructures such as microhardness and yield strength have been evaluated and shown to be a strong function of the grain size. The structure and properties of nanolayered Cu-Mo composites produced by sputter deposition are discussed. Synthesis of materials at low temperature using displacement reactions of layered composite is demonstrated. 16 refs., 10 figs

Recent progress in the development of SiC composites for nuclear fusion applications

Silicon carbide (SiC) fiber reinforced SiC matrix composites continue to undergo development for fusion applications worldwide because of inherent advantages of the material including low activation, high temperature capability, relatively low neutron absorption, and radiation resistance. This paper presents an international overview of recent achievements in SiC-based composites for fusion applications. Key subjects include applications in fusion reactors, high-dose radiation effects, transmutation effects, material lifetime assessment, and development of joining technology (processing, test method development, irradiation resistance, and modeling capability). This paper also discusses synergy among research for fusion materials and non-fusion materials (for fission and aerospace applications). Finally, future research directions and opportunities are proposed

A model of toughening effects in whisker-reinforced composites

A numerical approach is presented that lends itself to modeling the screening or antiscreening effects due solely to modulus differences of a discrete array of whiskers in an elastic matrix. The method is applied to single whiskers, and to examining the issue of whisker orientation of the toughness of ceramic composites. The model results indicate that crack-tip shielding due to modulus defect interactions occurs when the reinforcement has a higher modulus than the matrix material, and that anti-shielding occurs for the opposite case. Results for a single whisker located at the crack-tip (maximum effect) indicate that the crack-tip stress intensity is reduced by about 10% when a modulus ratio of four is assumed. Calculations performed with whisker arrays demonstrate pronounced effects of whisker orientation on the crack-tip screening, being larger for whiskers oriented perpendicular to the crack plane, as expected. Ordered whisker arrays produce larger and more uniform screening than do random whisker arrays. 16 refs., 10 figs