Quantum state swapping via qubit network with Hubbard interaction

We study the quantum state transfer (QST) in a class of qubit network with on-site interaction, which is described by the generalized Hubbard model with engineered couplings. It is proved that the system of two electrons with opposite spins in this quantum network of $N$ sites can be rigorously reduced into $N$ one dimensional engineered single Bloch electron models with central potential barrier. With this observation we find that such system can perform a perfect QST, the quantum swapping between two distant electrons with opposite spins. Numerical results show such QST and the resonant-tunnelling for the optimal on-site interaction strengths.Comment: 4 pages, 3 figure

The effects of disorder and interactions on the Anderson transition in doped Graphene

We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlarges of puddles can be explained by reviewing the effects of both interactions and disorder.Comment: 7 pages, 7 figure

Impurity scattering and Friedel oscillations in mono-layer black phosphorus

We study the effect of impurity scattering effect in black phosphorurene (BP) in this work. For single impurity, we calculate impurity induced local density of states (LDOS) in momentum space numerically based on tight-binding Hamiltonian. In real space, we calculate LDOS and Friedel oscillation analytically. LDOS shows strong anisotropy in BP. Many impurities in BP are investigated using $T$-matrix approximation when the density is low. Midgap states appear in band gap with peaks in DOS. The peaks of midgap states are dependent on impurity potential. For finite positive potential, the impurity tends to bind negative charge carriers and vise versa. The infinite impurity potential problem is related to chiral symmetry in BP