Exceeding the Manley-Rowe quantum efficiency limit in an optically pumped THz amplifier

Using a microscopic theory based on the Maxwell-semiconductor Bloch equations, we investigate the possibility of an optically-assisted electrically-driven THz quantum cascade laser. Whereas in optical conversion schemes the power conversion efficiency is limited by the Manley-Rowe relation, the proposed optically-assisted scheme can achieve higher efficiency by coherently recovering the optical pump energy. Furthermore, due to quantum coherence effects the detrimental effects of scattering are mitigated

Giant Modal Gain, Amplified Surface Plasmon Polariton Propagation, and Slowing Down of Energy Velocity in a Metal-Semiconductor-Metal Structure

We investigated surface plasmon polariton (SPP) propagation in a metal-semiconductor-metal structure where semiconductor is highly excited to have optical gain. We show that near the SPP resonance, the imaginary part of the propagation wavevector changes from positive to hugely negative, corresponding to an amplified SPP propagation. The SPP experiences a giant gain that is 1000 times of material gain in the excited semiconductor. We show that such a giant gain is related to the slowing down of average energy propagation in the structur

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≈12 ps) to 34 Å(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes

Excitation Induced Dephasing in Semiconductor Quantum Dots

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.Comment: 6 pages, 4 figures. Extensively revised text, two figures change

Single-charge rotating black holes in four-dimensional gauged supergravity

We consider four-dimensional U(1)^4 gauged supergravity, and obtain asymptotically AdS_4, non-extremal, charged, rotating black holes with one non-zero U(1) charge. The thermodynamic quantities are computed. We obtain a generalization that includes a NUT parameter. The general solution has a discrete symmetry involving inversion of the rotation parameter, and has a string frame metric that admits a rank-2 Killing-Stackel tensor.Comment: 9 page

eHealth interventions for people with chronic kidney disease

This is a protocol for a Cochrane Review (Intervention). The objectives are as follows: This review aims to look at the benefits and harms of using eHealth interventions in the CKD population

The Resonance Peak in Sr2_2RuO4_4: Signature of Spin Triplet Pairing

We study the dynamical spin susceptibility, $\chi({\bf q}, \omega)$, in the normal and superconducting state of Sr$_2$RuO$_4$. In the normal state, we find a peak in the vicinity of ${\bf Q}_i\simeq (0.72\pi,0.72\pi)$ in agreement with recent inelastic neutron scattering (INS) experiments. We predict that for spin triplet pairing in the superconducting state a {\it resonance peak} appears in the out-of-plane component of $\chi$, but is absent in the in-plane component. In contrast, no resonance peak is expected for spin singlet pairing.Comment: 4 pages, 4 figures, final versio

Gain spectroscopy of a type-II VECSEL chip

Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.Comment: 4 pages, 4 figure