Properties of interfaces in amorphous/crystalline silicon heterojunctions

To study recombination at the amorphous/crystalline Si (a- Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a-Si:H and tunable field-effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a-Si:H/c-Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross-sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c-Si is studied in combination with transmission electron microscopy

Hot deformation behavior and processing maps of diamond/Cu composites

The hot deformation behaviors of 50 vol pct uncoated and Cr-coated diamond/Cu composites were investigated using hot isothermal compression tests under the temperature and strain rate ranging from 1073 K to 1273 K (800 C to 1000 C) and from 0.001 to 5 s1, respectively. Dynamic recrystallization was determined to be the primary restoration mechanism during deformation. The Cr3C2 coating enhanced the interfacial bonding and resulted in a larger flow stress for the Cr-coated diamond/Cu composites. Moreover, the enhanced interfacial affinity led to a higher activation energy for the Cr-coated diamond/Cu composites (238 kJ/mol) than for their uncoated counterparts (205 kJ/mol). The strain-rate-dependent constitutive equations of the diamond/Cu composites were derived based on the Arrhenius model, and a high correlation (R = 0.99) was observed between the calculated flow stresses and experimental data. With the help of processing maps, hot extrusions were realized at 1123 K/0.01 s1 and 1153 K/0.01 s1 (850 C/0.01 s1 and 880 C/0.01 s1) for the uncoated and coated diamond/Cu composites, respectively. The combination of interface optimization and hot extrusion led to increases of the density and thermal conductivity, thereby providing a promising route for the fabrication of diamond/Cu composites

Ligne d'équilibre des glaciers : le stade de référence de 1850 dans les Alpes calcaires occidentales

No abstract available

TEM characterization of textured silicon heterojunction solar cells

Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and hence, due in particular to non-saturated bonds (dangling bonds), a large density of defects exists. Thus, in this case, the free-carrier lifetimes are no longer limited by the quality of the bulk c-Si, but by its surface. To keep the recombination losses at the c-Si surface at minimal levels, the surface must be electronically well passivated. An efficient way to obtain passivation is to use low temperature grown (typically 200°C) hydrogenated amorphous silicon (a-Si:H) [1]. In the case of photovoltaic applications, the passivation of both c-Si wafer surfaces (i.e., the emitter and the rear surface) is of crucial importance for good performances. In this work, the 3-7 nm a-Si:H based passivation layers of the device are grown by VHF-PECVD in a single chamber. The solar cells consist of a multilayered structure: Al back contact / DC-sputtered ITO (Indium Tin Oxyde) / n/i a-Si:H back surface field (BSF) / n-type c-Si substrate with a resistivity of 1-3 Ωcm / intrinsic a-Si:H / i/p a-Si:H emitter / and a front contact made out of DC-sputtered ITO via a shadow mask to define the cells (diameter = 4.5 mm). Such devices are called heterojunction (HJ) silicon solar cells. Surface recombination losses are a major concern for all c-Si solar cells. In particular, mastering of HJ emitter and back surface field formation on textured c-Si is crucial for high-performance HJ solar cells. High Resolution Transmission Electron Microscopy (HRTEM) is necessary to identify the key microstructural features of the a-Si:H/c-Si interface, and TEM micrographs of HJ interfaces on flat and textured high-performance devices are shown for the first time and discussed with respect to the resulting solar cell electrical performances. TEM micrographs of our flat high-efficiency HJs show abrupt c-Si/a-Si:H/μc-Si:H interfaces for emitter and BSF formation. Whereas on the pyramidal facets of the textured substrate the growth is identical to the flat substrate interface, we observed unexpected epitaxial growth at the bottom of the pyramid valleys. We have identified these local epitaxial domains as an efficient surface recombination path, and by consequence, as responsible for the observed decreased VOC on textured HJ cells. When minimizing the density of epitaxial domains at the c-Si/a-Si:H interface by adapting the deposition conditions, a solar cell VOC of 660 mV is obtained. An additional modification of the textured c-Si surface morphology leads to VOCs as high as 700 mV

Atomic-Scale Characterization of Aluminum-Based Multishell Nanoparticles Created by Solid-State Synthesis

Core/double-shell nanoparticles are produced by solid-state precipitation in an aluminum matrix and characterized by transmission electron microscopy and atom-probe tomography. By choosing three solute elements (Yb, Sc, Li) with substantially disparate diffusivities and by judiciously selecting aging temperatures to precipitate each element sequentially, nanoparticles are formed with three chemically distinct concentric Al3(Yb,Sc,Li) phases with radii of 1.6, 3.4, and 13.4 nm

Thermal conductivity and interfacial conductance of AlN particle reinforced metal matrix composites

Aluminum nitride (AlN) particle reinforced metal-matrix-composites produced by pressure infiltration are characterized in terms of their thermal conductivity. The composites are designed to cover a wide range of phase contrast between the dispersed particles and the matrix; this is achieved by changing the matrix conductivity using Cu, Al, Sn, and Pb as the matrix. The interface thermal conductance (h(c)) between AlN and the matrix metals is determined by varying the size of the AlN particles using the Hasselman-Johnson approach and the differential effective medium (DEM) model to calculate h(c) from measured composite conductivity values. In addition, h(c) is measured directly at the AlN/Al interface using the transient thermoreflectance (TTR) method on thin aluminum layers deposited on flat AlN substrates to find good agreement with the value derived directly from Al/AlN composites of variable particle size and thus confirm the approach used here to measure h(c). Data from the study show that h(c) at AlN-metal interfaces increases with the metal/AlN Debye temperature ratio; however, the increase is much less than predicted by currently accepted models. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553870

Muropeptide signature of inhibitors of protein synthesis correlates with β-lactam synergism against methicillin-resistant Staphylococcus aureus.

Quinupristin/dalfopristin (Q/D) and β-lactams interact positively against methicillin-resistant Staphylococcus aureus (MRSA). The effect extends to other inhibitors of protein synthesis, but not to inhibitors of polynucleotide synthesis or assembly, or to Q/D plus non-β-lactam cell wall inhibitors. Moreover, electron microscopy studies have correlated this effect with a thickened cell wall. In this study, we sought to determine whether inhibitors of protein synthesis might produce a specific peptidoglycan muropeptide signature that would correlate with their positive β-lactam interaction. The muropeptides of six S. aureus isolates (three methicillin-susceptible and three MRSA) were analysed using high-performance liquid chromatography and mass spectrometry. Exposure to 0.25× the minimum inhibitory concentration of inhibitors of protein synthesis consistently produced three main alterations irrespective of methicillin resistance: (i) an increase in peak 12 (a cyclic dimer of glycine-containing disaccharide-tetrapeptide); (ii) an increase in poorly resolved late-eluting materials; and (iii) a decrease in peak 1 (a disaccharide-pentapeptide). Eventually, the rate of autolysis was also decreased, supporting the structural alteration of the peptidoglycan. Other drug classes did not produce these anomalies. An increase in peak 12 was also observed in staphylococci treated with fosfomycin, which decreases expression of the native penicillin-binding protein (PBP) 2 and 4. Parallel blockage of normal PBPs with β-lactams abolished the anomalies, indicating that they resulted from altered function of native PBPs. This underlines the potential of inhibiting both protein synthesis and transpeptidation simultaneously and suggests that such a drug combination strategy might be efficaciously exploited

Etudiants en médecine et centres médico-sociaux: préparer l'avenir [Medical students and community health care centers: preparing the future].

Since 2011, second year medical students from Lausanne University follow a single day course in the community health care centers of the Canton of Vaud. They discover the medico-social network and attend to patients' visits at home. They experience the importance of the information transmission and the partnership between informal caregivers, professional caregivers, general practitioner and hospital units. The goal of this course is to help the future physicians to collaborate with the community health care centers teams. This will be particularly important in the future with an aging and more dependant population