17,112 research outputs found
Island formation without attractive interactions
We show that adsorbates on surfaces can form islands even if there are no
attractive interactions. Instead strong repulsion between adsorbates at short
distances can lead to islands, because such islands increase the entropy of the
adsorbates that are not part of the islands. We suggest that this mechanism
cause the observed island formation in O/Pt(111), but it may be important for
many other systems as well.Comment: 11 pages, 4 figure
Graph-Based Shape Analysis Beyond Context-Freeness
We develop a shape analysis for reasoning about relational properties of data
structures. Both the concrete and the abstract domain are represented by
hypergraphs. The analysis is parameterized by user-supplied indexed graph
grammars to guide concretization and abstraction. This novel extension of
context-free graph grammars is powerful enough to model complex data structures
such as balanced binary trees with parent pointers, while preserving most
desirable properties of context-free graph grammars. One strength of our
analysis is that no artifacts apart from grammars are required from the user;
it thus offers a high degree of automation. We implemented our analysis and
successfully applied it to various programs manipulating AVL trees,
(doubly-linked) lists, and combinations of both
Bond breaking in vibrationally excited methane on transition metal catalysts
The role of vibrational excitation of a single mode in the scattering of
methane is studied by wave packet simulations of oriented CH4 and CD4 molecules
from a flat surface. All nine internal vibrations are included. In the
translational energy range from 32 up to 128 kJ/mol we find that initial
vibrational excitations enhance the transfer of translational energy towards
vibrational energy and increase the accessibility of the entrance channel for
dissociation. Our simulations predict that initial vibrational excitations of
the asymmetrical stretch (nu_3) and especially the symmetrical stretch (nu_1)
modes will give the highest enhancement of the dissociation probability of
methane.Comment: 4 pages REVTeX, 2 figures (eps), to be published in Phys. Rev. B.
(See also arXiv:physics.chem-ph/0003031). Journal version at
http://publish.aps.org/abstract/PRB/v61/p1565
Domain wall structure in magnetic bilayers with perpendicular anisotropy
We study the magnetic domain wall structure in magnetic bilayers (two
ultrathin ferromagnetic layers separated by a non magnetic spacer) with
perpendicular magnetization. Combining magnetic force and ballistic electron
emission microscopies, we are able to reveal the details of the magnetic
structure of the wall with a high spatial accuracy. In these layers, we show
that the classical Bloch wall observed in single layers transforms into
superposed N\'eel walls due to the magnetic coupling between the ferromagnetic
layers. Quantitative agreement with micromagnetic calculations is achieved.Comment: Author adresses AB, SR, JM and AT: Laboratoire de Physique des
Solides, CNRS, Universit\'e Paris Sud, UMR 8502, 91405 Orsay Cedex, France ML
: Laboratoire PMTM, Institut Galil\'ee, CNRS, Universit\'e Paris-13, UPR
9001, 93430 Villetaneuse, Franc
Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
Although the creation of spin polarization in various non-magnetic media via
electrical spin injection from a ferromagnetic tunnel contact has been
demonstrated, much of the basic behavior is heavily debated. It is reported
here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs
that local magnetostatic fields arising from interface roughness dramatically
alter and even dominate the accumulation and dynamics of spins in the
semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to
reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous
and non-collinear with the injector magnetization. The inverted Hanle effect
serves as experimental signature. This interaction needs to be taken into
account in the analysis of experimental data, particularly in extracting the
spin lifetime and its variation with different parameters (temperature, doping
concentration). It produces a broadening of the standard Hanle curve and
thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si
at room temperature it is shown that the spin lifetime is larger than
previously determined, and a new lower bound of 0.29 ns is obtained. The
results are expected to be general and occur for spins near a magnetic
interface not only in semiconductors but also in metals, organic and
carbon-based materials including graphene, and in various spintronic device
structures.Comment: Final version, with text restructured and appendices added (25 pages,
9 figures). To appear in Phys. Rev.
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