15 research outputs found
First Principles Calculations of Fe on GaAs (100)
We have calculated from first principles the electronic structure of 0.5
monolayer upto 5 monolayer thick Fe layers on top of a GaAs (100) surface. We
find the Fe magnetic moment to be determined by the Fe-As distance. As
segregates to the top of the Fe film, whereas Ga most likely is found within
the Fe film. Moreover, we find an asymmetric in-plane contraction of our
unit-cell along with an expansion perpendicular to the surface. We predict the
number of Fe 3d-holes to increase with increasing Fe thickness on -doped
GaAs.Comment: 9 pages, 14 figures, submitted to PR
Resource allocation in a generalized LTE air interface virtualization framework exploiting user behavior
Optimal joint transmission and harvested energy scheduling for renewable energy harvesting enabled cellular network under coordinated multi-point transmission
Multiple resource allocation in device‐to‐device communication underlaying cellular networks from an end‐to‐end energy‐efficient perspective
Transceiver design for cooperative non‐orthogonal multiple access systems with wireless energy transfer
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas
Performance analysis of linear precoders with imperfect channel covariance information for multicell system
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) CMOSFETs with HfO2/TiN gate stack
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