Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells

The major loss mechanism of photogenerated polarons was investigated in P3HT:PCBM solar cells by the photo-CELIV technique. For pristine and annealed devices, we find that the experimental data can be explained by a bimolecular recombination rate reduced by a factor of about ten (pristine) and 25 (annealed) as compared to Langevin theory. Aided by a macroscopic device model, we discuss the implications of the lowered loss rate on the characteristics of polymer:fullerene solar cells.Comment: 3 pages, 4 figure

Comment on "Interface state recombination in organic solar cells"

In a recent paper, Street et al. [Phys. Rev. B 81, 205307 (2010)] propose first order recombination due to interface states to be the dominant loss mechanism in organic bulk heterojunction solar cells, based on steady-state current--voltage characteristics. By applying macroscopic simulations, we found that under typical solar cell conditions, monomolecular or bimolecular recombination cannot be inferred from the slope of the light intensity dependent photocurrent. In addition, we discuss the validity of calculating a mobility--lifetime product from steady-state measurements. We conclude that the experimental technique applied by Street et al. is not sufficient to unambiguously determine the loss mechanism.Comment: 4 pages, 2 figures. Corrected Eqns. (2) and (4): 1/... was missin

Bipolar Charge Transport in Poly(3-hexyl thiophene)/Methanofullerene Blends: A Ratio Dependent Study

We investigated the charge carrier mobility in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) blend devices by applying the time resolved photoconductivity experiment in dependence on the donor:acceptor ratio. We observe a bipolar transport in all studied samples ranging from pure polymer to polymer:fullerene with 90% PCBM content. For the ratios P3HT:PCBM 1:4 and 1:1 we observe two transit times in the electron current transients, as well as hole double transients for P3HT:PCBM 1:2. We find high hole and electron mobilities in the order of 10^(-3) - 10^(-2) cm^2/Vs for a concentration of 90% PCBM in the blend.Comment: 3 pages, 1 table, 2 figures, minor corrections include