Pitfall of the Detection Rate Optimized Bit Allocation within template protection and a remedy

One of the requirements of a biometric template protection system is that the protected template ideally should not leak any information about the biometric sample or its derivatives. In the literature, several proposed template protection techniques are based on binary vectors. Hence, they require the extraction of a binary representation from the real- valued biometric sample. In this work we focus on the Detection Rate Optimized Bit Allocation (DROBA) quantization scheme that extracts multiple bits per feature component while maximizing the overall detection rate. The allocation strategy has to be stored as auxiliary data for reuse in the verification phase and is considered as public. This implies that the auxiliary data should not leak any information about the extracted binary representation. Experiments in our work show that the original DROBA algorithm, as known in the literature, creates auxiliary data that leaks a significant amount of information. We show how an adversary is able to exploit this information and significantly increase its success rate on obtaining a false accept. Fortunately, the information leakage can be mitigated by restricting the allocation freedom of the DROBA algorithm. We propose a method based on population statistics and empirically illustrate its effectiveness. All the experiments are based on the MCYT fingerprint database using two different texture based feature extraction algorithms

Magneto-resistance in a lithography defined single constrained domain wall spin valve

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge

Kinetic cross coupling between non-conserved and conserved fields in phase field models

We present a phase field model for isothermal transformations of two component alloys that includes Onsager kinetic cross coupling between the non-conserved phase field and the conserved concentration field. We also provide the reduction of the phase field model to the corresponding macroscopic description of the free boundary problem. The reduction is given in a general form. Additionally we use an explicit example of a phase field model and check that the reduced macroscopic description, in the range of its applicability, is in excellent agreement with direct phase field simulations. The relevance of the newly introduced terms to solute trapping is also discussed

Dielectric properties of charge ordered LuFe2O4 revisited: The apparent influence of contacts

We show results of broadband dielectric measurements on the charge ordered, proposed to be mul- tiferroic material LuFe2O4. The temperature and frequency dependence of the complex permittivity as investigated for temperatures above and below the charge-oder transition near T_CO ~ 320 K and for frequencies up to 1 GHz can be well described by a standard equivalent-circuit model considering Maxwell-Wagner-type contacts and hopping induced AC-conductivity. No pronounced contribution of intrinsic dipolar polarization could be found and thus the ferroelectric character of the charge order in LuFe2O4 has to be questioned.Comment: 4 pages, 3 figure

Selective darkening of degenerate transitions for implementing quantum controlled-NOT gates

We present a theoretical analysis of the selective darkening method for implementing quantum controlled-NOT (CNOT) gates. This method, which we recently proposed and demonstrated, consists of driving two transversely-coupled quantum bits (qubits) with a driving field that is resonant with one of the two qubits. For specific relative amplitudes and phases of the driving field felt by the two qubits, one of the two transitions in the degenerate pair is darkened, or in other words, becomes forbidden by effective selection rules. At these driving conditions, the evolution of the two-qubit state realizes a CNOT gate. The gate speed is found to be limited only by the coupling energy J, which is the fundamental speed limit for any entangling gate. Numerical simulations show that at gate speeds corresponding to 0.48J and 0.07J, the gate fidelity is 99% and 99.99%, respectively, and increases further for lower gate speeds. In addition, the effect of higher-lying energy levels and weak anharmonicity is studied, as well as the scalability of the method to systems of multiple qubits. We conclude that in all these respects this method is competitive with existing schemes for creating entanglement, with the added advantages of being applicable for qubits operating at fixed frequencies (either by design or for exploitation of coherence sweet-spots) and having the simplicity of microwave-only operation.Comment: 25 pages, 5 figure

Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec

Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec