The career choice of first year occupational therapy students: A follow up study

This study replicated a survey of first-year occupational therapy students at Brunel University (Craik et al 2001) and 114 students (91.2%) responded. Their profile was similar to that of the students in the previous study, with 90% being female, 65% being over 21 years of age and 20% coming from minority ethnic groups. The most frequent way that the students had heard about occupational therapy remained through informal means, with variety and challenge continuing to be the most important factors in attracting potential students to the profession. The results of this study, taken with those of Craik et al (2001), provide data on 444 first-year students and further emphasise the importance of occupational therapists in encouraging recruitment to the professio

Wigner's Problem and Alternative Commutation Relations for Quantum Mechanics

It is shown, that for quantum systems the vectorfield associated with the equations of motion may admit alternative Hamiltonian descriptions, both in the Schr\"odinger and Heisenberg pictures. We illustrate these ambiguities in terms of simple examples.Comment: Latex,14 pages,accepted by Int. Jour.Mod.Phy

Resistant arterial hypertension in a patient with adrenal incidentaloma multiple steno-obstructive vascular lesions and antiphospholipid syndrome

Resistant hypertension is defined as above of blood pressure (≤ 140/90 mmHg) despite therapy with three or more antihypertensive drugs of different classes at maximum tolerable doses with one bling a diuretic. An important consideration in defining a patient with resistant hypertension is the mislabeling of secondary hypertension as resistant hypertension. Here, we report a patients with resistant hypertension caused by multiple stenoocclusive arteries due to antiphospholipid syndrome and coexisting with subclinical Cushing’s syndrome

Modeling of open quantum devices within the closed-system paradigm

We present an alternative simulation strategy for the study of nonequilibrium carrier dynamics in quantum devices with open boundaries. We propose to replace the usual modeling of open quantum systems based on phenomenological injection/loss rates with a kinetic description of the system-reservoir thermalization process. In this simulation scheme the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly nonthermal device electrons and the thermal carrier distribution of the reservoir. Applications to state-of-the-art semiconductor nanostructures are discussed. Finally, the proposed approach is extended to the quantum-transport regime; to this end, we introduce an effective Liouville superoperator, able to describe the effect of the device spatial boundaries on the time evolution of the single-particle density matrix