15 research outputs found
First Principles Calculations of Fe on GaAs (100)
We have calculated from first principles the electronic structure of 0.5
monolayer upto 5 monolayer thick Fe layers on top of a GaAs (100) surface. We
find the Fe magnetic moment to be determined by the Fe-As distance. As
segregates to the top of the Fe film, whereas Ga most likely is found within
the Fe film. Moreover, we find an asymmetric in-plane contraction of our
unit-cell along with an expansion perpendicular to the surface. We predict the
number of Fe 3d-holes to increase with increasing Fe thickness on -doped
GaAs.Comment: 9 pages, 14 figures, submitted to PR
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) CMOSFETs with HfO2/TiN gate stack
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