7,932 research outputs found
Multiple boundary peak solutions for some singularly perturbed Neumann problems
We consider the problem \left \{
\begin{array}{rcl} \varepsilon^2 \Delta u - u + f(u) = 0 & \mbox{ in }& \ \Omega\\ u > 0 \ \mbox{ in} \ \Omega, \ \frac{\partial u}{\partial \nu} = 0 & \mbox{ on }& \ \partial\Omega,
\end{array} \right. where \Omega is a bounded smooth domain in R^N, \varepsilon>KK-peakH(P)K-peak$ solutions.
We first use the Liapunov-Schmidt method to reduce the problem to finite dimensions.
Then we use a maximizing procedure to obtain multiple boundary spikes
Spontaneous direct bonding of thick silicon nitride
Wafers with LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical - mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si - Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding
The surface adhesion parameter: a measure for wafer bondability
A theory is presented which describes the initial direct wafer bonding process. The effect of surface microroughness on the bondability is studied on the basis of the theory of contact and adhesion of elastic solids. An effective bonding energy, the maximum of which is the specific surface energy of adhesion, is proposed to describe the real binding energy of the bonding interface including the influence of the wafer surface microroughness. Both the effective bonding energy and the real area of contact between rough surfaces depend on a dimensionless surface adhesion parameter, &thetas;. Using the adhesion parameter as a measure, three kinds of wafer contact interfaces can be identified with respect to their bondability; viz. the non-bonding regime (&thetas;>≈12), the bonding regime (&thetas;<≈1), and the adherence regime (1<&thetas;<12). Experimental data are in agreement with this theor
An omnidirectional retroreflector based on the transmutation of dielectric singularities
In the field of transformation optics, metamaterials mimic the effect of
coordinate transformations on electromagnetic waves, creating the illusion that
the waves are propagating through a virtual space. Transforming space by
appropriately designed materials makes devices possible that have been deemed
impossible. In particular, transformation optics has led to the demonstration
of invisibility cloaking for microwaves, surface plasmons and infrared light.
Here we report the achievement of another "impossible task". We implement, for
microwaves, a device that would normally require a dielectric singularity, an
infinity in the refractive index. We transmute a singularity in virtual space
into a mere topological defect in a real metamaterial. In particular, we
demonstrate an omnidirectional retroreflector, a device for faithfully
reflecting images and for creating high visibility, from all directions. Our
method is robust, potentially broadband and similar techniques could be applied
for visible light
Deterministic Quantum Key Distribution Using Gaussian-Modulated Squeezed States
A continuous variable ping-pong scheme, which is utilized to generate
deterministically private key, is proposed. The proposed scheme is implemented
physically by using Gaussian-modulated squeezed states. The deterministic way,
i.e., no basis reconciliation between two parties, leads a two-times efficiency
comparing to the standard quantum key distribution schemes. Especially, the
separate control mode does not need in the proposed scheme so that it is
simpler and more available than previous ping-pong schemes. The attacker may be
detected easily through the fidelity of the transmitted signal, and may not be
successful in the beam splitter attack strategy.Comment: 7 pages, 4figure
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