607 research outputs found

    High Efficiency Detection of Argon Scintillation Light of 128nm Using LAAPDs

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    The possibility of efficient collection and detection of vacuum ultraviolet light as emitted by argon, krypton, and xenon gas is studied. Absolute quantum efficiencies of large area avalanche photodiodes (LAAPDs) are derived at these wavelengths. VUV light of wavelengths down to the 128nm of Ar emission is shown to be detectable with silicon avalanche photodiodes at quantum efficiencies above 42%. Flexible Mylar foil overcoated with Al+MgF2_2 is measured to have a specular reflectivity of ∌\sim91% at argon emission wavelength. Low-pressure argon gas is shown to emit significant amounts of non-UV radiation. The average energy expenditure for the creation of non-UV photons in argon gas at this pressure is measured to be below 378 eV.Comment: 5 pages, 4 figures, Talk given at IEEE 2005 Nuclear Science Symposium and Medical Imaging Conference, Puerto Ric

    The Argon Dark Matter Experiment (ArDM)

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    The ArDM experiment, a 1 ton liquid argon TPC/Calorimeter, is designed for the detection of dark matter particles which can scatter off the spinless argon nuclei. These events producing a recoiling nucleus will be discerned by their light to charge ratio, as well as the time structure of the scintillation light. The experiment is presently under construction and will be commissioned on surface at CERN. Here we describe the detector concept and give a short review on the main detector components.Comment: Proceedings of 4th Patras workshop (DESY) on Axions, Wimps and Wisps (4 pages, 4 figures

    Luminescence quenching of the triplet excimer state by air traces in gaseous argon

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    While developing a liquid argon detector for dark matter searches we investigate the influence of air contamination on the VUV scintillation yield in gaseous argon at atmospheric pressure. We determine with a radioactive alpha-source the photon yield for various partial air pressures and different reflectors and wavelength shifters. We find for the fast scintillation component a time constant tau1= 11.3 +- 2.8 ns, independent of gas purity. However, the decay time of the slow component depends on gas purity and is a good indicator for the total VUV light yield. This dependence is attributed to impurities destroying the long-lived argon excimer states. The population ratio between the slowly and the fast decaying excimer states is determined for alpha-particles to be 5.5 +-0.6 in argon gas at 1100 mbar and room temperature. The measured mean life of the slow component is tau2 = 3.140 +- 0.067 microsec at a partial air pressure of 2 x 10-6 mbar.Comment: 7 pages submitted to NIM

    Study of nuclear recoils in liquid argon with monoenergetic neutrons

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    For the development of liquid argon dark matter detectors we assembled a setup in the laboratory to scatter neutrons on a small liquid argon target. The neutrons are produced mono-energetically (E_kin=2.45 MeV) by nuclear fusion in a deuterium plasma and are collimated onto a 3" liquid argon cell operating in single-phase mode (zero electric field). Organic liquid scintillators are used to tag scattered neutrons and to provide a time-of-flight measurement. The setup is designed to study light pulse shapes and scintillation yields from nuclear and electronic recoils as well as from {\alpha}-particles at working points relevant to dark matter searches. Liquid argon offers the possibility to scrutinise scintillation yields in noble liquids with respect to the populations of the two fundamental excimer states. Here we present experimental methods and first results from recent data towards such studies.Comment: 9 pages, 8 figures, proceedings of TAUP 2011, to be published in Journal of Physics: Conference Series (JCPS

    First test of a high voltage feedthrough for liquid Argon TPCs connected to a 300 kV power supply

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    Voltages above a hundred kilo-volt will be required to generate the drift field of future very large liquid Argon Time Projection Chambers. The most delicate component is the feedthrough whose role is to safely deliver the very high voltage to the cathode through the thick insulating walls of the cryostat without compromising the purity of the argon inside. This requires a feedthrough that is typically meters long and carefully designed to be vacuum tight and have small heat input. Furthermore, all materials should be carefully chosen to allow operation in cryogenic conditions. In addition, electric fields in liquid argon should be kept below a threshold to reduce risks of discharges. The combination of all above requirements represents significant challenges from the design and manufacturing perspective. In this paper, we report on the successful operation of a feedthrough satisfying all the above requirements. The details of the feedthrough design and its manufacturing steps are provided. Very high voltages up to unprecedented voltages of -300 kV could be applied during long periods repeatedly. A source of instability was observed, which was specific to the setup configuration which was used for the test and not due to the feedthrough itself.Comment: 13 pages, 9 figure

    Extraction of electric field in heavily irradiated silicon pixel sensors

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    A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.

    Simulation of Heavily Irradiated Silicon Pixel Detectors

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    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.Comment: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figure

    Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

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    This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change
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