Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature

Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical properties and first-principles calculations. We find that almost doping-independent mobility of 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad doping range from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4 ohm^-1cm^-1 reached at the latter carrier density is comparable to the highest value. We attribute the high mobility to several physical properties of (Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding, small disorder effects due to the doping away from the SnO2 conduction channel, and reduced carrier scattering due to the high dielectric constant. The observation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainly attributed to additional carrier-scatterings which are presumably created by the lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The main optical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and the in-gap states only slightly increased, thus maintaining optical transparency in the visible region. Based on these, we suggest that the doped BaSnO3 system holds great potential for realizing all perovskite-based, transparent high-frequency high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.Comment: 31 pages, 7 figure

Local Metric Learning for Off-Policy Evaluation in Contextual Bandits with Continuous Actions

We consider local kernel metric learning for off-policy evaluation (OPE) of deterministic policies in contextual bandits with continuous action spaces. Our work is motivated by practical scenarios where the target policy needs to be deterministic due to domain requirements, such as prescription of treatment dosage and duration in medicine. Although importance sampling (IS) provides a basic principle for OPE, it is ill-posed for the deterministic target policy with continuous actions. Our main idea is to relax the target policy and pose the problem as kernel-based estimation, where we learn the kernel metric in order to minimize the overall mean squared error (MSE). We present an analytic solution for the optimal metric, based on the analysis of bias and variance. Whereas prior work has been limited to scalar action spaces or kernel bandwidth selection, our work takes a step further being capable of vector action spaces and metric optimization. We show that our estimator is consistent, and significantly reduces the MSE compared to baseline OPE methods through experiments on various domains

Electric field control of nonvolatile four-state magnetization at room temperature

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62 $\mu$$_{B}$/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients

High Mobility in a Stable Transparent Perovskite Oxide

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 Deg. C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.Comment: 15 pages, 3 figure

The Impact of Intima-media Thickness of Radial Artery on Early Failure of Radiocephalic Arteriovenous Fistula in Hemodialysis Patients

This study was performed to investigate the impact of intima-media thickness (IMT) of radial artery on early failure of radiocephalic arteriovenous fistula (AVF) in hemodialysis (HD) patients. Ninety uremic patients undergoing radiocephalic AVF operation were included in this study. During the operation, 10-mm long partial arterial walls were removed with elliptical form for microscopic analysis. Specimens were stained with trichrome and examined by a pathologist blinded to the clinical data. And then AVF patency was followed up for 1 yr after the operation. Of the total 90 patients, 31 patients (34%) had AVF failure within 1 yr after the operation. Mean IMT was thicker in failed group (n=31) than in patent group (n=59) (486±130 µm vs. 398±130 µm, p=0.004). The AVF patency rate within 1 yr after the operation was lower in patients with IMT ≥500 µm (n=26) than in patients with IMT <500 µm (n=64) (p=0.017). Age was an independent risk factor of IMT. Diabetes mellitus tended to be independent risk factor but not statistically significant. Our data suggest that increased radial artery IMT is closely associated with early failure of radiocephalic AVF in HD patients