3 research outputs found
Electrical polarization switching in bulk single crystal GaFeO
The electrical polarization switching on stoichiometric GaFeO single
crystal was measured, and a new model of atomic displacements responsible for
the polarization reverse was proposed. The widely adapted mechanism of
polarization switching in GaFeO can be applied to stoichiometric,
perfectly ordered crystals. However, the grown single crystals, as well as thin
films of Ga-Fe-O, show pronounced atomic disorder. By piezoresponse force
microscopy, the electrical polarization switching on a crystal surface
perpendicular to the electrical polarization direction was demonstrated. Atomic
disorder in the crystal was measured by X-ray diffraction and M\"ossbauer
spectroscopy. These measurements were supported by ab initio calculations. By
analysis of atomic disorder and electronic structure calculations, the energies
of defects of cations in foreign cationic sites were estimated. The energies of
the polarization switch were estimated, confirming the proposed mechanism of
polarization switching in GaFeO single crystals
Electrical polarization switching in bulk single-crystal GaFeO
The electrical polarization switching on a stoichiometric GaFeO single crystal was measured, and a model of atomic displacements responsible for the polarization reverse was proposed. The widely adapted mechanism of polarization switching in GaFeO can be applied to stoichiometric, perfectly ordered crystals. However, the grown single crystals, as well as thin films of Ga-Fe-O, show pronounced atomic disorder. Using piezoresponse force microscopy, the electrical polarization switching on a crystal surface perpendicular to the electrical polarization direction was demonstrated. Atomic disorder in the crystal was measured by x-ray diffraction and Mössbauer spectroscopy. These measurements were supported by ab initio calculations. Using analysis of atomic disorder and electronic structure calculations, the energies of defects of cations in foreign cationic sites were estimated. The energies of the polarization switch were estimated, confirming the proposed mechanism of polarization switching in GaFeO single crystals
Beyond GWAS—Could Genetic Differentiation within the Allograft Rejection Pathway Shape Natural Immunity to COVID-19?
COVID-19 infections pose a serious global health concern so it is crucial to identify the biomarkers for the susceptibility to and resistance against this disease that could help in a rapid risk assessment and reliable decisions being made on patients’ treatment and their potential hospitalisation. Several studies investigated the factors associated with severe COVID-19 outcomes that can be either environmental, population based, or genetic. It was demonstrated that the genetics of the host plays an important role in the various immune responses and, therefore, there are different clinical presentations of COVID-19 infection. In this study, we aimed to use variant descriptive statistics from GWAS (Genome-Wide Association Study) and variant genomic annotations to identify metabolic pathways that are associated with a severe COVID-19 infection as well as pathways related to resistance to COVID-19. For this purpose, we applied a custom-designed mixed linear model implemented into custom-written software. Our analysis of more than 12.5 million SNPs did not indicate any pathway that was significant for a severe COVID-19 infection. However, the Allograft rejection pathway (hsa05330) was significant (p = 0.01087) for resistance to the infection. The majority of the 27 SNP marking genes constituting the Allograft rejection pathway were located on chromosome 6 (19 SNPs) and the remainder were mapped to chromosomes 2, 3, 10, 12, 20, and X. This pathway comprises several immune system components crucial for the self versus non-self recognition, but also the components of antiviral immunity. Our study demonstrated that not only single variants are important for resistance to COVID-19, but also the cumulative impact of several SNPs within the same pathway matters