Spin relaxation in diluted magnetic semiconductor quantum dots

Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and deformation potential is included. The resulting spin lifetime is typically on the order of microseconds. The effectiveness of the phonon-mediated spin-flip mechanism increases with increasing Mn concentration, electron spin splitting, vertical confining strength and lateral diameter, while it shows non-monotonic dependence on the magnetic field and temperature. An interesting finding is that the spin relaxation in a small quantum dot is suppressed for strong magnetic field and low Mn concentration at low temperature.Comment: 11 pages, 11 figures, to be published in Phys. Rev.

Permutation branes and linear matrix factorisations

All the known rational boundary states for Gepner models can be regarded as permutation branes. On general grounds, one expects that topological branes in Gepner models can be encoded as matrix factorisations of the corresponding Landau-Ginzburg potentials. In this paper we identify the matrix factorisations associated to arbitrary B-type permutation branes.Comment: 43 pages. v2: References adde

Fully electrically read-write device out of a ferromagnetic semiconductor

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.Comment: 4 pages, 4 figure

Integrability of the N=2 boundary sine-Gordon model

We construct a boundary Lagrangian for the N=2 supersymmetric sine-Gordon model which preserves (B-type) supersymmetry and integrability to all orders in the bulk coupling constant g. The supersymmetry constraint is expressed in terms of matrix factorisations.Comment: LaTeX, 19 pages, no figures; v2: title changed, minor improvements, refs added, to appear in J. Phys. A: Math. Ge

Lithographic engineering of anisotropies in (Ga,Mn)As

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures

Moduli Webs and Superpotentials for Five-Branes

We investigate the one-parameter Calabi-Yau models and identify families of D5-branes which are associated to lines embedded in these manifolds. The moduli spaces are given by sets of Riemann curves, which form a web whose intersection points are described by permutation branes. We arrive at a geometric interpretation for bulk-boundary correlators as holomorphic differentials on the moduli space and use this to compute effective open-closed superpotentials to all orders in the open string couplings. The fixed points of D5-brane moduli under bulk deformations are determined.Comment: 41 pages, 1 figur