3,624 research outputs found

    Electrostatic confinement of electrons in an integrable graphene quantum dot

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    We compare the conductance of an undoped graphene sheet with a small region subject to an electrostatic gate potential for the cases that the dynamics in the gated region is regular (disc-shaped region) and classically chaotic (stadium). For the disc, we find sharp resonances that narrow upon reducing the area fraction of the gated region. We relate this observation to the existence of confined electronic states. For the stadium, the conductance looses its dependence on the gate voltage upon reducing the area fraction of the gated region, which signals the lack of confinement of Dirac quasiparticles in a gated region with chaotic classical electron dynamics.Comment: 4 pages, 4 figures; [v2] Added discussion of large aspect ratio

    Photon heat transport in low-dimensional nanostructures

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    At low temperatures when the phonon modes are effectively frozen, photon transport is the dominating mechanism of thermal relaxation in metallic systems. Starting from a microscopic many-body Hamiltonian, we develop a nonequilibrium Green's function method to study energy transport by photons in nanostructures. A formally exact expression for the energy current between a metallic island and a one-dimensional electromagnetic field is obtained. From this expression we derive the quantized thermal conductance as well as show how the results can be generalized to nonequilibrium situations. Generally, the frequency-dependent current noise of the island electrons determines the energy transfer rate.Comment: 4 pages, 3 Fig

    Signatures of Klein tunneling in disordered graphene p-n-p junctions

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    We present a method for obtaining quantum transport properties in graphene that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum mechanical analysis of transport, and the ability to model experimentally relevant system sizes. As a pertinent application we study the disorder dependence of Klein tunneling dominated transport in p-n-p junctions. Both the resistance and the Fano factor show broad resonance peaks due to the presence of quasi bound states. This feature is washed out by the disorder when the mean free path becomes of the order of the distance between the two p-n interfaces.Comment: 4 pages, 4 figure

    Demonstration of one-parameter scaling at the Dirac point in graphene

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    We numerically calculate the conductivity σ\sigma of an undoped graphene sheet (size LL) in the limit of vanishingly small lattice constant. We demonstrate one-parameter scaling for random impurity scattering and determine the scaling function β(σ)=dlnσ/dlnL\beta(\sigma)=d\ln\sigma/d\ln L. Contrary to a recent prediction, the scaling flow has no fixed point (β>0\beta>0) for conductivities up to and beyond the symplectic metal-insulator transition. Instead, the data supports an alternative scaling flow for which the conductivity at the Dirac point increases logarithmically with sample size in the absence of intervalley scattering -- without reaching a scale-invariant limit.Comment: 4 pages, 5 figures; v2: introduction expanded, data for Gaussian model extended to larger system sizes to further demonstrate single parameter scalin

    On the Veldkamp Space of GQ(4, 2)

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    The Veldkamp space, in the sense of Buekenhout and Cohen, of the generalized quadrangle GQ(4, 2) is shown not to be a (partial) linear space by simply giving several examples of Veldkamp lines (V-lines) having two or even three Veldkamp points (V-points) in common. Alongside the ordinary V-lines of size five, one also finds V-lines of cardinality three and two. There, however, exists a subspace of the Veldkamp space isomorphic to PG(3, 4) having 45 perps and 40 plane ovoids as its 85 V-points, with its 357 V-lines being of four distinct types. A V-line of the first type consists of five perps on a common line (altogether 27 of them), the second type features three perps and two ovoids sharing a tricentric triad (240 members), whilst the third and fourth type each comprises a perp and four ovoids in the rosette centered at the (common) center of the perp (90). It is also pointed out that 160 non-plane ovoids (tripods) fall into two distinct orbits -- of sizes 40 and 120 -- with respect to the stabilizer group of a copy of GQ(2, 2); a tripod of the first/second orbit sharing with the GQ(2, 2) a tricentric/unicentric triad, respectively. Finally, three remarkable subconfigurations of V-lines represented by fans of ovoids through a fixed ovoid are examined in some detail.Comment: 6 pages, 7 figures; v2 - slightly polished, subsection on fans of ovoids and three figures adde

    Exponential sensitivity to dephasing of electrical conduction through a quantum dot

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    According to random-matrix theory, interference effects in the conductance of a ballistic chaotic quantum dot should vanish (τϕ/τD)p\propto(\tau_{\phi}/\tau_{D})^{p} when the dephasing time τϕ\tau_{\phi} becomes small compared to the mean dwell time τD\tau_{D}. Aleiner and Larkin have predicted that the power law crosses over to an exponential suppression exp(τE/τϕ)\propto\exp(-\tau_{E}/\tau_{\phi}) when τϕ\tau_{\phi} drops below the Ehrenfest time τE\tau_{E}. We report the first observation of this crossover in a computer simulation of universal conductance fluctuations. Their theory also predicts an exponential suppression exp(τE/τD)\propto\exp(-\tau_{E}/\tau_{D}) in the absence of dephasing -- which is not observed. We show that the effective random-matrix theory proposed previously for quantum dots without dephasing explains both observations.Comment: 4 pages, 4 figure

    Pumped current and voltage for an adiabatic quantum pump

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    We consider adiabatic pumping of electrons through a quantum dot. There are two ways to operate the pump: to create a dc current Iˉ{\bar I} or to create a dc voltage Vˉ{\bar V}. We demonstrate that, for very slow pumping, Iˉ{\bar I} and Vˉ{\bar V} are not simply related via the dc conductance GG as Iˉ=VˉG\bar I = \bar V G. For the case of a chaotic quantum dot, we consider the statistical distribution of VˉGIˉ{\bar V} G - {\bar I}. Results are presented for the limiting cases of a dot with single channel and with multichannel point contacts.Comment: 6 pages, 4 figure
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