Band Gap Modulated Tunnel FET

This chapter presents bandgap-modulated tunnel field effect transistor (TFET) and discusses its simulation and modeling. A geometry of TFET, the heterojunction TFET, is considered, and different electrical parameters are discussed using Technology Computer Aided Design (TCAD) tool. The effect of the heterojunction on the characteristics is observed through the variations in the length and mole fraction of the pocket layer adjacent to the source. An analytical model is further presented for gate-drain underlap TFET using 2-D Poisson equation and Kane’s interband tunneling model. The results are validated with the output from the TCAD tool

Dielectric-Modulated TFETs as Label-Free Biosensors

This chapter presents tunnel field effect transistors (TFETs) as dielectric-modulated (DM) label-free biosensors, and discusses various aspects related to them. A brief survey of the dielectric-modulated TFET biosensors is presented. The concept of dielectric modulation in TFETs is discussed with focus on principle and design perspectives. A Technology Computer Aided Design (TCAD) based approach to incorporate embedded nanogaps in TFET geometries along with appropriate physics-based simulation models are mentioned. Non-ideal conditions in dielectric-modulated biosensors are brought to light, keeping in view the practical considerations of the devices. A gate engineered TFET is taken up for analysis of sensitivities under different conditions through TCAD simulations. Finally, a status map of the sensitivities of the most significant works in dielectric-modulated label-free biosensors is depicted, and the status of the proposed TFET is highlighted

Optimization of electrical characteristics of Tunnel FET incorporating Gate Engineering

In this paper, the electrical characteristics of different structures of TFET including ferrorelectric gate have been studied. The devices have been optimized in order to provide the best values of SS in each device. The best result obtained for SS is 22mV/dec and for I ON /I OFF ratio is 4.4×10 13 . Temperature dependence of each device has been plotted and compared