Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction. High-aspect-ratio (length/diameter) nanorods allow the use of a sufficient thickness of material to obtain good optical absorption while simultaneously providing short collection lengths for excited carriers in a direction normal to the light absorption. The short collection lengths facilitate the efficient collection of photogenerated carriers in materials with low minority-carrier diffusion lengths. The modeling indicates that the design of the radial p-n junction nanorod device should provide large improvements in efficiency relative to a conventional planar geometry p-n junction solar cell, provided that two conditions are satisfied: (1) In a planar solar cell made from the same absorber material, the diffusion length of minority carriers must be too low to allow for extraction of most of the light-generated carriers in the absorber thickness needed to obtain full light absorption. (2) The rate of carrier recombination in the depletion region must not be too large (for silicon this means that the carrier lifetimes in the depletion region must be longer than ~10 ns). If only condition (1) is satisfied, the modeling indicates that the radial cell design will offer only modest improvements in efficiency relative to a conventional planar cell design. Application to Si and GaAs nanorod solar cells is also discussed in detail

Experimental demonstration of enhanced photon recycling in angle-restricted GaAs solar cells

For cells near the radiative limit, optically limiting the angles of emitted light causes emitted photons to be recycled back to the cell, leading to enhancement in voltage and efficiency. While this has been understood theoretically for some time, only recently have GaAs cells reached sufficient quality for the effect to be experimentally observed. Here, as proof of concept, we demonstrate enhanced photon recycling and open-circuit voltage (V_(oc)) experimentally using a narrow band dielectric multilayer angle restrictor on a high quality GaAs cell. With angle restriction we observe a clear decrease in the radiative dark current, which is consistent with the observed V_(oc) increase. Furthermore, we observe larger V_(oc) enhancements for cells that are closer to the radiative limit, and that more closely coupling the angle restrictor to the cell leads to greater V_(oc) gains, emphasizing the optical nature of the effect

p-n junction heterostructure device physics model of a four junction solar cell

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of N_A = 1 x 10^(18) cm^(-3) and N_D = 1 x 10^(17) cm^(-3). The physical characteristics of the cell model include: free carrier absorption, temperature and doping effects on carrier mobility, as well as recombination via Shockley-Read-Hall recombination from a single midgap trap level and surface recombination. Upper bounds on cell efficiency set by detailed balance calculations can be approached by letting the parameters approach ideal conditions. However whereas detailed balance calculations always benefit from added subcells, the current matching requirements for series connected p-n multi-junctions indicate a minimum necessary performance from an added subcell to yield a net increase in overall device efficiency. For the four junction cell considered here, optimizing the subcell thickness is an important part of optimizing the efficiency. Series resistance limitations for concentrator applications can be systematically explored for a given set of subcells. The current matching limitation imposed by series connection reduces efficiency relative to independently-connected cells. The overall trend indicates an approximately 5% drop in efficiency for series connected cells relative to identical independently connected cells. The series-connected devices exhibit a high sensitivity to spectral changes and individual subcell performance. If any single subcell within the series-connected device is degraded relative to its optimal design, the entire device is severely hindered. This model allows complex heterostructure solar cell structures to be evaluated by providing device physics-based predictions of performance limitations

Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate

Multiple arrays of Si wires were sequentially grown and transferred into a flexible polymer film from a single Si(111) wafer. After growth from a patterned, oxide-coated substrate, the wires were embedded in a polymer and then mechanically separated from the substrate, preserving the array structure in the film. The wire stubs that remained were selectively etched from the Si(111) surface to regenerate the patterned substrate. Then the growth catalyst was electrodeposited into the holes in the patterned oxide. Cycling through this set of steps allowed regrowth and polymer film transfer of several wire arrays from a single Si wafer

Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts

Arrays of vertically oriented Si wires with diameters of 1.5 µm and lengths of up to 75 µm were grown over areas >1 cm^2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed

A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices

We have investigated the low-temperature epitaxial growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 µm on Si(100) substrates at a substrate temperature of 230°C. This opens the possibility of growing high quality films on low cost substrates. The H_2:SiH_4 dilution ratio was set to 50:1 for all growths. Consistent with previous results, the epitaxial thickness is found to decrease with an increase in the substrate temperature

Radial pn junction nanorod solar cells: device physics principles and routes to fabrication in silicon

We have developed quantitative device-physics models for a radial pn junction nanorod solar cell, that is, a cell which consists of densely packed nanorods attached to a conducting substrate, each nanorod with a pn junction in the radial direction. It is found that this novel design shows large improvements over the planar geometry so long as two conditions are satisfied: a) a planar solar cell made from the same material is collection limited, i.e. the diffusion length of minority carriers is too low to allow for collection of most or all of the light-generated carriers in the conventional planar geometry, and b) recombination in the depletion region is not too high, or, equivalently, the lifetime of carriers in the depletion region is not too short. In order to experimentally validate this concept, the vapor-liquid-solid (VLS) growth of silicon (Si) nanorods has been explored using metal catalyst particles that are not as deleterious to the minority carrier lifetime of Si as gold (Au), the most commonly used wire growth catalyst

Synthesis and Characterization of Silicon Nanorod Arrays for Solar Cell Applications

Silicon nanorods have been grown by chemical vapor deposition of silane, using both gold and indium as catalysts for the vapor liquid solid (VLS) process. Conditions for optimal rod morphology for each catalyst were identified by varying silane partial pressure and temperature in the range P = 0.05-1 Torr and T = 300-600 C, respectively. In most cases, catalyst particles were formed by partial de-wetting of evaporated films of the catalytic material to form droplets with diameters of tens to hundreds of nanometers. Also, periodic arrays of catalyst particles with controlled size and spacing were achieved both by the use of porous alumina membranes and also by electron-beam lithography. Using these techniques, silicon nanorods were grown with diameters of 100 nm to microns and lengths of microns to tens of microns. Four-point and gate-bias-dependent resistance measurements were made on single wires, and these indicate that rods we have grown with gold catalysts and phosphine doping have metal-like conductivity

Secondary ion mass spectrometry of vapor−liquid−solid grown, Au-catalyzed, Si wires

Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl_4 at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10^16 atoms/cm^3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

p-n junction heterostructure device physics model of a four junction solar cell

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of N_A = 1 x 10^(18) cm^(-3) and N_D = 1 x 10^(17) cm^(-3). The physical characteristics of the cell model include: free carrier absorption, temperature and doping effects on carrier mobility, as well as recombination via Shockley-Read-Hall recombination from a single midgap trap level and surface recombination. Upper bounds on cell efficiency set by detailed balance calculations can be approached by letting the parameters approach ideal conditions. However whereas detailed balance calculations always benefit from added subcells, the current matching requirements for series connected p-n multi-junctions indicate a minimum necessary performance from an added subcell to yield a net increase in overall device efficiency. For the four junction cell considered here, optimizing the subcell thickness is an important part of optimizing the efficiency. Series resistance limitations for concentrator applications can be systematically explored for a given set of subcells. The current matching limitation imposed by series connection reduces efficiency relative to independently-connected cells. The overall trend indicates an approximately 5% drop in efficiency for series connected cells relative to identical independently connected cells. The series-connected devices exhibit a high sensitivity to spectral changes and individual subcell performance. If any single subcell within the series-connected device is degraded relative to its optimal design, the entire device is severely hindered. This model allows complex heterostructure solar cell structures to be evaluated by providing device physics-based predictions of performance limitations