A study of channeling patterns from strained Si1-xGex/Si bilayers close to (011) axes

This paper characterises the angular intensity distribution of MeV protons transmitted through strained Si1-xGex/Si bilayers close to the axis. The ring-like intensity distribution produced by the front layer axis when it is aligned close to the beam direction is projected either towards or away from the rotated back layer axis. The resultant transmitted angular intensity distribution depends on both the bilayer tilt angle and the interface rotation angle. Previously unobserved intensity distributions through such structures are simulated using a Monte Carlo channeling code, and similar behaviour is also observed in channeling patterns recorded from thinned, strained Si1-xGex/Si bilayers

Characterization of strain in crystal bilayers using ion-channeling patterns

This paper describes the experimental and theoretical simulation, the observation and the quantification of strain present in crystal bilayers using ion-channeling patterns produced-by a focused 3 MeV proton beam. The dechanneling effects of strain are first experimentally simulated using different rotation angles between two individual, 0.3-mu m-thick, [100] silicon crystals. The patterns produced when both crystals are aligned close to the [100] axis, with a small rotation angle at the interface, are considered in detail using Monte Carlo computer simulations. Previously unobserved effects occurring in channeling patterns are discussed and general conditions under which different behavior is observed are described. Channeling patterns recorded through a thinned Si0.85Ge0.15/Si crystal bilayer are then used to characterize the interface rotation angle dong several off-normal axes