Proposal of a spin torque majority gate logic

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.Comment: 14 pages, 4 figure

Coupled-Oscillator Associative Memory Array Operation for Pattern Recognition

Operation of the array of coupled oscillators underlying the associative memory function is demonstrated for various interconnection schemes (cross-connect, star phase keying and star frequency keying) and various physical implementation of oscillators (van der Pol, phase-locked loop, spin torque). The speed of synchronization of oscillators and the evolution of the degree of matching is studied as a function of device parameters. The dependence of errors in association on the number of the memorized patterns and the distance between the test and the memorized pattern is determined for Palm, Furber and Hopfield association algorithms