Electrodynamics of Magnetic Pulse Welding Machines: Global and Local Electrical Analogues

In this paper, a theoretical, experimental and numerical study of MPW machines is carried out. While it is known that such machines are very complex by nature because of the coupling between different parts, we used simple electrical analogues to describe its dynamics. A RLC circuit modeling the whole machine is depicted and experimental results are shown. A further study including numerical simulations allows to compute the current distribution and estimate the magnetic field within the coil but also the magnetic pressure generated in the process, all using a 2D model and reasonable assumptions. A late theoretical study opens the way for innovative experimental measurements regarding the kinetics of the deformations of metallic tubes, but also their mechanical behavior before the welding process, making use of their capacitive properties

Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties

We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramagnetic resonance (EPR), and magnetometry employing a superconducting quantum interference device (SQUID). A combination of TEM and EDS reveals the presence of coherent nanocrystals presumably FexN with the composition and lattice parameter imposed by the host. From both TEM and SIMS studies, it is stated that the density of nanocrystals and, thus the Fe concentration increases towards the surface. In layers with iron content x<0.4% the presence of ferromagnetic signatures, such as magnetization hysteresis and spontaneous magnetization, have been detected. We link the presence of ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced by TEM and EDS studies. This interpretation is supported by magnetization measurements after cooling in- and without an external magnetic field, pointing to superparamagnetic properties of the system. It is argued that the high temperature ferromagnetic response due to spinodal decomposition into regions with small and large concentration of the magnetic component is a generic property of diluted magnetic semiconductors and diluted magnetic oxides showing high apparent Curie temperature.Comment: 21 pages, 30 figures, submitted to Phys. Rev.

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials

Hétéro-épitaxie de nitrure de gallium semi-isolant peu disloqué sur substrat de saphir pour applications HEMTs AlGaN/GaN

NICE-BU Sciences (060882101) / SudocSudocFranceF

Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells

International audienceExperimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even though phonon and carrier-carrier scattering mechanisms naturally lead to a mobility decrease versus carrier density, they are by themselves not able to justify the whole set of experimental data. Instead, we propose to attribute an extrinsic origin to the scattering associated with the progressive appearance of strain relaxation defects and give explicit expressions for the collision time associated with interface roughness and interface charge spatial fluctuations (“electrical” roughness) which may result from the existence of cracks in AlxGa1−xN, thickness inhomogeneity, misfit dislocations, and alloy disorder