The Analysis of a Wideband Strip-Helical Antenna with 1.1 Turns

A wideband strip-helical antenna with 1.1 turns is analyzed numerically and experimentally. By replacing the traditional wire helix with wide metallic strip, the forward traveling current on the strip helix with about one turn smoothly decays to the minimum value at the open end of the helix. Therefore, the strip helix can excite a wideband circular polarization (CP) wave with 50-ohm impedance matching. The proposed antenna is printed on a hollow-cylinder with a substrate relative permittivity of εr=2.2 and a thickness of h=0.5 mm. A 50 Ω coaxial cable is directly connected to excite the strip-helical antenna without any additional impedance matching section. The ground plane is placed below the antenna in order to provide a directional radiation pattern. To demonstrate this method, a prototype of 1.1-turn strip-helical antenna is tested. The test shows that the proposed antenna can reach an overlapped bandwidth of 46% with height of 0.52λ0, where λ0 is the wavelength in free space at the center operation frequency

Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

The ammonothermal method is considered the most promising method of fabricating bulk gallium nitride (GaN) crystals. This paper improves the ammonothermal growth model by replacing the heater-long fixed temperature boundary with two resistance heaters and considering the real thermal boundary outside the shell. The relationship between power values and temperatures of dissolution and crystallization is expressed by the backpropagation (BP) neural network, and the optimal power values for specific systems are found using the non-dominated sorting genetic algorithm (NSGAII). Simulation results show that there are several discrepancies between updated and simplified models. It is necessary to build an ammonothermal system model with resistance heaters as a heat source. Then large-sized GaN crystal growth is analyzed based on the well-developed numerical model. According to the simulation results, both the increasing rate and maximum stable values of the metastable GaN concentration gradient are reduced for a larger-sized system, which is caused by the inhomogeneity of heat transfer in the autoclave

The Effect of the Crucible on the Temperature Distribution for the Growth of a Large Size AlN Single Crystal

The appropriate distribution of temperature in the growth system is critical for obtaining a large size high quality aluminum nitride (AlN) single crystal by the physical vapor transport (PVT) method. As the crystal size increases, the influence of the crucible on the temperature distribution inside the growth chamber becomes greater. In order to optimize the field of temperature and study the specific effects of various parts of the crucible on the large size AlN single crystal growth system, this study carried out a series of numerical simulations of the temperature field of two crucibles of different materials and put forward the concept of a composite crucible, which combines different materials in the crucible parts. Four composite crucible models were established with different proportions and positions of tantalum carbide (TaC) parts and graphite parts in the crucible. Calculations reveal that different parts of the crucible have different effects on the internal temperature distribution. The axial temperature gradient at the crystal was mainly governed by the crucible wall, whereas the temperature gradient was determined by the integrated effect of the crucible lid and the crucible wall in the radial direction. One type of composite crucible was chosen to minimize the thermal stress in grown AlN crystal, which is applicable to the growth of large sized AlN crystals in the future; it can also be used to grow AlN single crystals at present as well

Numerical Investigation of Thermal Buoyancy, the Electromagnetic Force and Forced Convection in Conventional RF Systems for 4-Inch Sic by TSSG

In this paper, we study thermal buoyancy, the electromagnetic force and forced convection in a conventional radio frequency (RF) furnace for growing large-sized (4-inch) silicon carbide ingots using the top-seeded solution method. The thermal buoyancy and electromagnetic force are analyzed qualitatively and quantitatively under real working conditions, and a method to increase the growth stability of large-sized (4-inch) SiC is proposed through the study of forced convection

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future

Urban Traffic Operation Pattern and Spatiotemporal Mode Based on Big Data (Taking Beijing Urban Area as an Example)

An analysis of urban traffic operation pattern and spatiotemporal mode is an important basis to solve the problems of traffic congestion, emergency and extreme weather. Traditional studies on the urban traffic operation pattern and spatiotemporal mode usually are restricted by issues as poor time effectiveness, large space scale and coarse time granularity of traffic flow data, thus this essay choose to use the urban traffic speed data based on floating vehicle trajectory to dissect the urban traffic operation pattern and spatiotemporal mode in Beijing in a multi-dimensional and fine granularity. Differences of features in weekdays and weekends are also compared. This paper reports that âtwo-peakâ mode is obvious in the urban traffic condition. Besides, the morning peak of weekends is postponed to 11-12 am, and the night peak appears shorter in 5 pm compared to weekdays. Finally, four modes of traffic and its driving mechanism are concluded

Efficient Online Learning with Offline Datasets for Infinite Horizon MDPs: A Bayesian Approach

In this paper, we study the problem of efficient online reinforcement learning in the infinite horizon setting when there is an offline dataset to start with. We assume that the offline dataset is generated by an expert but with unknown level of competence, i.e., it is not perfect and not necessarily using the optimal policy. We show that if the learning agent models the behavioral policy (parameterized by a competence parameter) used by the expert, it can do substantially better in terms of minimizing cumulative regret, than if it doesn't do that. We establish an upper bound on regret of the exact informed PSRL algorithm that scales as $\tilde{O}(\sqrt{T})$. This requires a novel prior-dependent regret analysis of Bayesian online learning algorithms for the infinite horizon setting. We then propose an approximate Informed RLSVI algorithm that we can interpret as performing imitation learning with the offline dataset, and then performing online learning.Comment: 22 page

Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal diameter, the effect of seed rotation causes more uneven temperature distribution. The difficulty of growing large-size bulk β-Ga2O3 single crystals with the Czochralski method is caused by spiral growth. By using dynamic mesh technology to update the crystal growth interface, the calculation results show that the solid–liquid interface of the four-inch crystal is slightly convex and the center is slightly concave. With the increase of crystal growth time, the symmetry of cylindrical crystal will be broken, which will lead to spiral growth. The numerical results of the six-inch crystal show that the whole solid–liquid interface is concave and unstable, which is not conducive to crystal growth

Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal

To reduce the thermal stress during the sublimation growth of 45 mm AlN single crystal, a tungsten sink was put on the top of the crucible lid. Numerical experiments showed that the radial temperature gradient was reduced due to the homogenization effect on temperature as a result of the sink. Therefore, this simple tungsten sink method has the potential to grow large-size AlN ingots with fewer cracks. It also reveals that enhancing the heat exchange of the crucible lid is an effective way to improve the quality of crystal growth

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, which were prepared from MTS-H2 gaseous system, were performed in this work by using the finite element method. The chemistry kinetic model of gas-phase reactions employed in this work was proposed by other researchers. The total gas flow rate, temperature, and ratio of MTS/H2 were the main process parameters in this work, and their effects on consumption rate of MTS, molar fraction of intermediate species and C/Si ratio inside the hot reaction chamber were analyzed in detail. The phenomena of our simulations are interesting. Both low total gas flow rate and high substrate temperature have obvious effectiveness on increasing the consumption rate of MTS. For all cases, the highest three C contained intermediates are CH4, C2H4 and C2H2, respectively, while the highest three Si/Cl contained intermediates are SiCl2, SiCl4 and HCl, respectively. Furthermore, low total gas flow results in a uniform C/Si ratio at different temperatures, and reducing the ratio of MTS/H2 is an interesting way to raise the C/Si ratio in the reactor