Creation of wear-resistant near-surface-layers with inhomogeneous structure on NiTi alloy by ion implantation technology

In the present study we report the changes in the modified near-surface layer on NiTi shape memory alloy, caused by ion implantation as well as their influence on the structure and mechanical properties of this material. Experimental results of an inhomogeneous structure and tribological properties of implanted NiTi are discussed in this paper

Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate

Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained

Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular bea

Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2

Лазерне формування періодичних мікро- наноструктур на поверхні монокристалічного кремнію

Experimental studies of the features of the formation of laser-induced periodic nanostructures on the surface of silicon wafers in the zones of action of second, millisecond and nanosecond laser pulses are conducted in the work. The results of microscopic investigations by optical and electron microscopes of periodic structures formed on surfaces with crystallographic orientation (111), (100) are presented. The obtained results can be used to optimize the laser pulse mode for controlled micro- nanostructuring of the semiconductor surface.В роботі проведено експериментальні дослідження особливостей утворення лазер-індукованих періодичних наноструктур на поверхні кремнієвих пластин в зонах дії секундних, мілісекундних і наносекундних лазерних імпульсів. Наведені результати мікроскопічних досліджень оптичним і електронним мікроскопом періодичних структур, які формуються на поверхнях з кристалографічною орієнтацією (111), (100). Одержані результати можуть бути використані для оптимізації режиму імпульсного лазерного впливу з метою контрольованого наноструктурування поверхні напівпровідників для цілей мікроелектроніки та фотовольтаїки

Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method

The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated