Indentation Response of Calcium Aluminoborosilicate Glasses Subjected to Humid Aging and Hot Compression

Aluminoborosilicate glasses find a wide range of applications, which require good mechanical reliability such as surface damage resistance. Calcium aluminoborosilicate (CABS) glasses have recently been found to exhibit so-called intermediate behavior in terms of their response to sharp contact loading. That is, these glasses deform with less shear than normal glass and less densification than anomalous glasses. This deformation mechanism is believed to give rise to high crack initiation resistance of certain CABS glasses. In order to further improve and understand the micromechanical properties of this glass family, we studied the indentation response of different CABS glasses subjected to two types of post-treatment, namely hot compression and humid aging. Upon hot compression, density, elastic moduli, and hardness increased. Specifically, elastic modulus increased by as much as 20% relative to the as-made sample, while the largest change in hardness was 1.8 GPa compared to the as-made sample after hot compression. The pressure-induced increase in these properties can be ascribed to the increase in network connectivity and bond density. On the other hand, the crack initiation resistance decreased, as the hot compression increased the residual stress driving the indentation cracking. Humid aging had only a minor impact on density, modulus, and hardness, but an observed decrease in crack initiation resistance. We discuss the correlations between hardness, density, crack resistance, and deformation mechanism and our study thus provides guidelines for tailoring the mechanical properties of oxide glasses

High Pressure Processing of Ion Implanted GaN

It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals