Heat capacity of α\alpha-GaN: Isotope Effects

Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literature values for polycrystalline materials. The dependence of the heat capacity on the isotopic mass has also been investigated recently for monatomic crystals such as diamond, silicon, and germanium. Multi-atomic crystals are expected to exhibit a different dependence of these heat capacities on the masses of each of the isotopes present. These effects have not been investigated in the past. We also present \textit{first-principles} calculations of the dependence of the heat capacities of GaN, as a canonical binary material, on each of the Ga and N masses. We show that they are indeed different, as expected from the fact that the Ga mass affects mainly the acoustic, that of N the optic phonons. It is hoped that these calculations will encourage experimental measurements of the dependence of the heat capacity on isotopic masses in binary and more complex semiconductors.Comment: 12 pages, 5 Figures, submitted to PR

Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B||c) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B┴c) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g|| ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively

AlGaInN Laser Diode Technology for Systems Applications

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation