Influence of base impurity distribution on the photoelectric properties of surface-barrier UV photodetectors

The article presents the study on spectral, capacitance-voltage and current-voltage characteristics of surface-barrier structures based on A2B6 composition with different carrier concentration profiles in space-charge region sensitive to ultraviolet range and perspective for ultraviolet sensor application

Ultraviolet photosensors based on ZnS thin films

High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region