Letter to Sound Rules for Accented Lexicon Compression

This paper presents trainable methods for generating letter to sound rules from a given lexicon for use in pronouncing out-of-vocabulary words and as a method for lexicon compression. As the relationship between a string of letters and a string of phonemes representing its pronunciation for many languages is not trivial, we discuss two alignment procedures, one fully automatic and one hand-seeded which produce reasonable alignments of letters to phones. Top Down Induction Tree models are trained on the aligned entries. We show how combined phoneme/stress prediction is better than separate prediction processes, and still better when including in the model the last phonemes transcribed and part of speech information. For the lexicons we have tested, our models have a word accuracy (including stress) of 78% for OALD, 62% for CMU and 94% for BRULEX. The extremely high scores on the training sets allow substantial size reductions (more than 1/20). WWW site: http://tcts.fpms.ac.be/synthesis/mbrdicoComment: 4 pages 1 figur

Computation of epidemic final size distributions

We develop a new methodology for the efficient computation of epidemic final size distributions for a broad class of Markovian models. We exploit a particular representation of the stochastic epidemic process to derive a method which is both computationally efficient and numerically stable. The algorithms we present are also physically transparent and so allow us to extend this method from the basic SIR model to a model with a phase-type infectious period and another with waning immunity. The underlying theory is applicable to many Markovian models where we wish to efficiently calculate hitting probabilities.Comment: final published versio

Subsurface impurities and vacancies in a three-dimensional topological insulator

Using a three-dimensional microscopic lattice model of a strong topological insulator (TI) we study potential impurities and vacancies in surface and subsurface positions. For all impurity locations we find impurity-induced resonance states with energy proportional to the inverse of the impurity strength, although the impurity strength needed for a low-energy resonance state increases with the depth of the impurity. For strong impurities and vacancies as deep as 15 layers into the material, resonance peaks will appear at and around the Dirac point in the surface energy spectrum, splitting the original Dirac point into two nodes located off-center. Furthermore, we study vacancy clusters buried deep inside the bulk and find zero-energy resonance states for both single and multiple-site vacancies. Only fully symmetric multiple-site vacancy clusters show resonance states expelled from the bulk gap.Comment: 7 pages, 4 figures. Minor changes in v

Strong potential impurities on the surface of a topological insulator

Topological insulators (TIs) are said to be stable against non-magnetic impurity scattering due to suppressed backscattering in the Dirac surface states. We solve a lattice model of a three-dimensional TI in the presence of strong potential impurities and find that both the Dirac point and low-energy states are significantly modified: low-energy impurity resonances are formed that produce a peak in the density of states near the Dirac point, which is destroyed and split into two nodes that move off-center. The impurity-induced states penetrate up to 10 layers into the bulk of the TI. These findings demonstrate the importance of bulk states for the stability of TIs and how they can destroy the topological protection of the surface.Comment: 4+ pages, 3 figures. Published versio

Odd-frequency superconducting pairing in topological insulators

We discuss the appearance of odd-frequency spin-triplet s-wave superconductivity, first proposed by Berezinskii [{\it JETP} {\bf 20}, 287 (1974)], on the surface of a topological insulator proximity coupled to a conventional spin-singlet s-wave superconductor. Using both analytical and numerical methods we show that this disorder robust odd-frequency state is present whenever there is an in-surface gradient in the proximity induced gap, including superconductor-normal state (SN) junctions. The time-independent order parameter for the odd-frequency superconductor is proportional to the in-surface gap gradient. The induced odd-frequency component does not produce any low-energy states.Comment: 6 pages, 5 figures. v2 contains minor changes + supplementary materia