51 research outputs found
Exceptional surface and bulk electronic structures in a topological insulator, Bi2Se3
The outstanding problem in topological insulators is the bulk metallicity underneath topologically ordered surface states and the appearance of Dirac point far away from the Fermi energy. Enormous efforts are being devoted to get the Dirac point at the Fermi level via exposure to foreign materials so that these materials can be used in technology and realize novel fundamental physics. Ironically, the conclusion of bulk metallicity in the electronic structure is essentially based on the angle resolved photoemission spectroscopy, a highly surface sensitive technique. Here, we employed state of-the-art hard x-ray photoemission spectroscopy with judiciously chosen experiment geometry to delineate the bulk electronic structure of a topological insulator and a potential thermoelectric material, Bi2Se3. The
results exhibit signature of insulating bulk electronic structure with tiny intensities at ef akin to defect/vacancy induced doped states in the semiconductors. The core level spectra exhibit intense plasmon peak associated to core level excitations manifesting the signature of coupling of electrons to the collective excitations, a possible case of plasmon-phonon coupling. In addition, a new loss feature appear in the core level spectra indicating presence of additional collective excitations in the system
Anomalies of a topologically ordered surface
Bulk insulators with strong spin orbit coupling exhibit metallic surface states possessing topological order protected by the time reversal symmetry. However, experiments show vulnerability of topological states to aging and impurities. Different studies show contrasting behavior of the Dirac states along with plethora of anomalies, which has become an outstanding problem in material science. Here, we probe the electronic structure of Bi2Se3 employing high resolution photoemission spectroscopy and discover the dependence of the behavior of Dirac particles on surface terminations. The Dirac cone apex appears at different binding energies and exhibits contrasting shift on Bi and Se terminated surfaces with complex time dependence emerging from subtle adsorbed oxygen-surface atom interactions. These results uncover the surface states behavior of real systems and the dichotomy of topological and normal surface states important for device fabrication as well as realization of novel physics such as Majorana Fermions, magnetic monopole, etc
Pnictogens Allotropy and Phase Transformation during van der Waals Growth
Pnictogens have multiple allotropic forms resulting from their ns2 np3
valence electronic configuration, making them the only elemental materials to
crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout
the group. Light group VA elements are found in the layered orthorhombic A17
phase such as black phosphorus, and can transition to the layered rhombohedral
A7 phase at high pressure. On the other hand, bulk heavier elements are only
stable in the A7 phase. Herein, we demonstrate that these two phases not only
co-exist during the vdW growth of antimony on weakly interacting surfaces, but
also undertake a spontaneous transformation from the A17 phase to the
thermodynamically stable A7 phase. This metastability of the A17 phase is
revealed by real-time studies unraveling its thickness-driven transition to the
A7 phase and the concomitant evolution of its electronic properties. At a
critical thickness of ~4 nm, A17 antimony undergoes a diffusionless shuffle
transition from AB to AA stacked alpha-antimonene followed by a gradual
relaxation to the A7 bulk-like phase. Furthermore, the electronic structure of
this intermediate phase is found to be determined by surface self-passivation
and the associated competition between A7- and A17-like bonding in the bulk.
These results highlight the critical role of the atomic structure and
interfacial interactions in shaping the stability and electronic
characteristics of vdW layered materials, thus enabling a new degree of freedom
to engineer their properties using scalable processes
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