Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead-Free and Relaxor-Ferroelectric/Paraelectric Multilayer Devices

Future pulsed-power electronic systems based on dielectric capacitors require the use of environment-friendly materials with high energy-storage performance that can operate efficiently and reliably in harsh environments. Here, a study of multilayer structures, combining paraelectric-like Ba0.6Sr0.4TiO3 (BST) with relaxor-ferroelectric BaZr0.4Ti0.6O3 (BZT) layers on SrTiO3-buffered Si substrates, with the goal to optimize the high energy-storage performance is presented. The energy-storage properties of various stackings are investigated and an extremely large maximum recoverable energy storage density of ≈165.6 J cm−3 (energy efficiency ≈ 93%) is achieved for unipolar charging–discharging of a 25-nm-BZT/20-nm-BST/910-nm-BZT/20-nm-BST/25-nm-BZT multilayer structure, due to the extremely large breakdown field of 7.5 MV cm−1 and the lack of polarization saturation at high fields in this device. Strong indications are found that the breakdown field of the devices is determined by the outer layers of the multilayer stack and can be increased by improving the quality of these layers. Authors are also able to deduce design optimization rules for this material combination, which can be to a large extend justify by structural analysis. These rules are expected also to be useful for optimizing other multilayer systems and are therefore very relevant for further increasing the energy storage density of capacitors.</p

Pulsed Laser Deposition of Cs2AgBiBr6: from Mechanochemically Synthesized Powders to Dry, Single-Step Deposition

Cs2AgBiBr6 has been proposed as a promising lead-free and stable double perovskite alternative to hybrid and lead-based perovskites. However, the low solubility of precursors during wet synthesis, or the distinct volatility of components during evaporation, results in complex multistep synthesis approaches, hampering the widespread employment of Cs2AgBiBr6 films. Here, we present pulsed laser deposition of Cs2AgBiBr6 films as a dry, single-step and single-source deposition approach for high-quality film formation. Cs2AgBiBr6 powders were prepared by mechanochemical synthesis and pressed into a solid target maintaining phase purity. Controlled laser ablation of the double perovskite target in vacuum and a substrate temperature of 200 °C results in the formation of highly crystalline Cs2AgBiBr6 films. We discuss the importance of deposition pressure to achieve stoichiometric transfer and of substrate temperature during PLD growth to obtain high-quality Cs2AgBiBr6 films with grain sizes > 200 nm. This work demonstrates the potential of PLD, an established technique in the semiconductor industry, to deposit complex halide perovskite materials while being compatible with optoelectronic device fabrication, such as UV and X-ray detectors

Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI₃ Films

The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $\gamma$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $\gamma$ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-$\gamma$) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O$_3$ capping layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.Comment: Accepted by Advanced Materials Interfaces, 16 pages, 4 figures, and supplemen

In Situ X-ray Absorption Spectroscopy of LaFeO₃ and LaFeO₃/LaNiO₃ Thin Films in the Electrocatalytic Oxygen Evolution Reaction

We study the electrocatalytic oxygen evolution reaction using in situ X-ray absorption spectroscopy (XAS) to track the dynamics of the valence state and the covalence of the metal ions of LaFeO3 and LaFeO3/LaNiO3 thin films. The active materials are 8 unit cells grown epitaxially on 100 nm conductive La0.67Sr0.33MnO3 layers using pulsed laser deposition (PLD). The perovskite layers are supported on monolayer Ca2Nb3O10 nanosheet-buffered 100 nm SiNx membranes. The in situ Fe and Ni K-edges XAS spectra were measured from the backside of the SiNx membrane using fluorescence yield detection under electrocatalytic reaction conditions. The XAS spectra show significant spectral changes, which indicate that (1) the metal (co)valencies increase, and (2) the number of 3d electrons remains constant with applied potential. We find that the whole 8 unit cells react to the potential changes, including the buried LaNiO3 film.</p

In Situ X-ray Absorption Spectroscopy of LaFeO3 and LaFeO3/LaNiO3 Thin Films in the Electrocatalytic Oxygen Evolution Reaction

We study the electrocatalytic oxygen evolution reaction using in situ X-ray absorption spectroscopy (XAS) to track the dynamics of the valence state and the covalence of the metal ions of LaFeO3 and LaFeO3/LaNiO3 thin films. The active materials are 8 unit cells grown epitaxially on 100 nm conductive La0.67Sr0.33MnO3 layers using pulsed laser deposition (PLD). The perovskite layers are supported on monolayer Ca2Nb3O10 nanosheet-buffered 100 nm SiNx membranes. The in situ Fe and Ni K-edges XAS spectra were measured from the backside of the SiNx membrane using fluorescence yield detection under electrocatalytic reaction conditions. The XAS spectra show significant spectral changes, which indicate that (1) the metal (co)valencies increase, and (2) the number of 3d electrons remains constant with applied potential. We find that the whole 8 unit cells react to the potential changes, including the buried LaNiO3 film

Orbital-overlap-driven hybridization in 3d-transition metal perovskite oxides LaMO₃ (M = Ti-Ni) and La₂CuO₄

The wide tunability of strongly correlated transition metal (TM) oxides stems from their complex electronic properties and the coupled degrees of freedom. Among the perovskite oxides family, LaMO3 (M = Ti-Ni) allows an M-dependent systematic study of the electronic structure within the same-structure-family motif. While most of the studies have been focusing on the 3d TMs and oxygen sites, the role of the rare-earth site has been far less explored. In this work, we use resonant inelastic X-ray scattering (RIXS) at the lanthanum N4,5 edges and density functional theory (DFT) to investigate the hybridization mechanisms in LaMO3. We link the spatial-overlap-driven hybridization to energetic-overlap-driven hybridization by comparing the RIXS chemical shifts and the DFT band widths. The scope is extended to highly covalent Ruddlesden-Popper perovskite La2CuO4 by intercalating lanthanum atoms to rock-salt layers. Our work evidences an observable contribution of localized lanthanum 5p and 4f orbitals in the band structure.</p

How to make the thinnest possible free-standing sheets of perovskite materials

2D crystalline membranes are easily made from some materials, but not from those with strong 3D lattices, such as technologically useful perovskite oxides. Free-standing perovskite monolayers have finally been made