Study on Electrochemical Preparation of Copper Oxides Semiconductor and the Diodes

豊橋技術科学大

Photon-Assisted Electrodeposition of <0001>-n-ZnO/<111>-p-Cu 2 O Photovoltaic Devices with TiO 2 Intermediate Layer

Abstract. The <111>-Cu 2 O/<0001>-ZnO photovoltaic (PV) device has been constructed by a electrodeposition f Cu 2 O layer followed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO 2 layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The performance of AZO/<0001>-ZnO/TiO 2 /<111>-Cu 2 O PV-devices changed depending on the preparation condition for the TiO 2 layer, and the short-circuit current density of 4.86 mAcm -2 has been obtained for the PV device prepared under optimized condition. Introduction A photovoltaic device composed of p-Cu 2 O and n-ZnO semiconductors has received broad attention as a candidate of the next generation thin film solar cell, because of the nontoxicity, abundance, theoretical conversion efficiency of around 18