167 research outputs found
Multi-excitonic complexes in single InGaN quantum dots
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers
grown by metal organic chemical vapor deposition on Si(111) substrates are
reported. Sharp lines originating from InGaN quantum dots are observed.
Temperature dependent measurements reveal thermally induced carrier
redistribution between the quantum dots. Spectral diffusion is observed and was
used as a tool to correlate up to three lines that originate from the same
quantum dot. Variation of excitation density leads to identification of exciton
and biexciton. Binding and anti-binding complexes are discovered.Comment: 3 pages, 4 figure
Reducing decoherence of the confined exciton state in a quantum dot by pulse-sequence control
We study the phonon-induced dephasing of the exciton state in a quantum dot
excited by a sequence of ultra-short pulses. We show that the multiple-pulse
control leads to a considerable improvement of the coherence of the optically
excited state. For a fixed control time window, the optimized pulsed control
often leads to a higher degree of coherence than the control by a smooth single
Gaussian pulse. The reduction of dephasing is considerable already for 2-3
pulses.Comment: Final version (moderate changes
Isospin phases of vertically coupled double quantum rings under the influence of perpendicular magnetic fields
Vertically coupled double quantum rings submitted to a perpendicular magnetic
field are addressed within the local spin-density functional theory. We
describe the structure of quantum ring molecules containing up to 40 electrons
considering different inter-ring distances and intensities of the applied
magnetic field. When the rings are quantum mechanically strongly coupled, only
bonding states are occupied and the addition spectrum of the artificial
molecules resembles that of a single quantum ring, with some small differences
appearing as an effect of the magnetic field. Despite the latter has the
tendency to flatten the spectra, in the strong coupling limit some clear peaks
are still found even when that can be interpretated from the
single-particle energy levels analogously as at zero applied field, namely in
terms of closed-shell and Hund's-rule configurations. Increasing the inter-ring
distance, the occupation of the first antibonding orbitals washes out such
structures and the addition spectra become flatter and irregular. In the weak
coupling regime, numerous isospin oscillations are found as a function of .Comment: 27 pages, 11 figures. To be published in Phys. Rev.
Engineering the spatial confinement of exciton-polaritons in semiconductors
We demonstrate the spatial confinement of electronic excitations in a solid
state system, within novel artificial structures that can be designed having
arbitrary dimensionality and shape. The excitations under study are
exciton-polaritons in a planar semiconductor microcavity. They are confined
within a micron-sized region through lateral trapping of their photon
component. Striking signatures of confined states of lower and upper polaritons
are found in angle-resolved light emission spectra, where a discrete energy
spectrum and broad angular patterns are present. A theoretical model supports
unambiguously our observations
Full configuration interaction approach to the few-electron problem in artificial atoms
We present a new high-performance configuration interaction code optimally
designed for the calculation of the lowest energy eigenstates of a few
electrons in semiconductor quantum dots (also called artificial atoms) in the
strong interaction regime. The implementation relies on a single-particle
representation, but it is independent of the choice of the single-particle
basis and, therefore, of the details of the device and configuration of
external fields. Assuming no truncation of the Fock space of Slater
determinants generated from the chosen single-particle basis, the code may
tackle regimes where Coulomb interaction very effectively mixes many
determinants. Typical strongly correlated systems lead to very large
diagonalization problems; in our implementation, the secular equation is
reduced to its minimal rank by exploiting the symmetry of the effective-mass
interacting Hamiltonian, including square total spin. The resulting Hamiltonian
is diagonalized via parallel implementation of the Lanczos algorithm. The code
gives access to both wave functions and energies of first excited states.
Excellent code scalability in a parallel environment is demonstrated; accuracy
is tested for the case of up to eight electrons confined in a two-dimensional
harmonic trap as the density is progressively diluted and correlation becomes
dominant. Comparison with previous Quantum Monte Carlo simulations in the
Wigner regime demonstrates power and flexibility of the method.Comment: RevTeX 4.0, 18 pages, 6 tables, 9 postscript b/w figures. Final
version with new material. Section 6 on the excitation spectrum has been
added. Some material has been moved to two appendices, which appear in the
EPAPS web depository in the published versio
Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs)
are predicted to exhibit a strong non-parabolic dependence of the interband
transition energy on the electric field, which is not encountered in single SAD
structures nor in other types of quantum structures. Our study based on an
eight-band strain-dependent Hamiltonian indicates that
this anomalous quantum confined Stark effect is caused by the three-dimensional
strain field distribution which influences drastically the hole states in the
stacked SAD structures.Comment: 4 pages, 4 figure
Microscopic theory of quantum dot interactions with quantum light: local field effect
A theory of both linear and nonlinear electromagnetic response of a single QD
exposed to quantum light, accounting the depolarization induced local--field
has been developed. Based on the microscopic Hamiltonian accounting for the
electron--hole exchange interaction, an effective two--body Hamiltonian has
been derived and expressed in terms of the incident electric field, with a
separate term describing the QD depolarization. The quantum equations of motion
have been formulated and solved with the Hamiltonian for various types of the
QD excitation, such as Fock qubit, coherent fields, vacuum state of
electromagnetic field and light with arbitrary photonic state distribution. For
a QD exposed to coherent light, we predict the appearance of two oscillatory
regimes in the Rabi effect separated by the bifurcation. In the first regime,
the standard collapse--revivals phenomenon do not reveal itself and the QD
population inversion is found to be negative, while in the second one, the
collapse--revivals picture is found to be strongly distorted as compared with
that predicted by the standard Jaynes-Cummings model. %The model developed can
easily be extended to %%electromagnetic excitation. For the case of QD
interaction with arbitrary quantum light state in the linear regime, it has
been shown that the local field induce a fine structure of the absorbtion
spectrum. Instead of a single line with frequency corresponding to which the
exciton transition frequency, a duplet is appeared with one component shifted
by the amount of the local field coupling parameter. It has been demonstrated
the strong light--mater coupling regime arises in the weak-field limit. A
physical interpretation of the predicted effects has been proposed.Comment: 14 pages, 7 figure
Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon
We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on
Si substrates using molecular-beam epitaxy. Transmission electron microscopy
(TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows
domination of the zinc-blende phase. This is further confirmed in optics of
single NWs, studied using cw and time-resolved photoluminescence (PL). A
detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP
capping in suppressing the non-radiative surface states: significant PL
enhancement in the core-shell structures exceeding 2000 times at 10K is
observed; in uncapped NWs PL is quenched at 60K whereas single core-shell
GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis
of the PL temperature dependence in both types of NW we are able to determine
the main carrier escape mechanisms leading to the PL quench
Dephasing in InAs/GaAs quantum dots
The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290±80 fs from spectal-hole burning and of 260±20 fs from four-wave mixing
Ground-State of Charged Bosons Confined in a Harmonic Trap
We study a system composed of N identical charged bosons confined in a
harmonic trap. Upper and lower energy bounds are given. It is shown in the
large N limit that the ground-state energy is determined within an accuracy of
and that the mean field theory provides a reasonable result with
relative error of less than 16% for the binding energy .Comment: 15 page
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