167 research outputs found

    Multi-excitonic complexes in single InGaN quantum dots

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    Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.Comment: 3 pages, 4 figure

    Reducing decoherence of the confined exciton state in a quantum dot by pulse-sequence control

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    We study the phonon-induced dephasing of the exciton state in a quantum dot excited by a sequence of ultra-short pulses. We show that the multiple-pulse control leads to a considerable improvement of the coherence of the optically excited state. For a fixed control time window, the optimized pulsed control often leads to a higher degree of coherence than the control by a smooth single Gaussian pulse. The reduction of dephasing is considerable already for 2-3 pulses.Comment: Final version (moderate changes

    Isospin phases of vertically coupled double quantum rings under the influence of perpendicular magnetic fields

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    Vertically coupled double quantum rings submitted to a perpendicular magnetic field BB are addressed within the local spin-density functional theory. We describe the structure of quantum ring molecules containing up to 40 electrons considering different inter-ring distances and intensities of the applied magnetic field. When the rings are quantum mechanically strongly coupled, only bonding states are occupied and the addition spectrum of the artificial molecules resembles that of a single quantum ring, with some small differences appearing as an effect of the magnetic field. Despite the latter has the tendency to flatten the spectra, in the strong coupling limit some clear peaks are still found even when B≠0B\neq 0 that can be interpretated from the single-particle energy levels analogously as at zero applied field, namely in terms of closed-shell and Hund's-rule configurations. Increasing the inter-ring distance, the occupation of the first antibonding orbitals washes out such structures and the addition spectra become flatter and irregular. In the weak coupling regime, numerous isospin oscillations are found as a function of BB.Comment: 27 pages, 11 figures. To be published in Phys. Rev.

    Engineering the spatial confinement of exciton-polaritons in semiconductors

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    We demonstrate the spatial confinement of electronic excitations in a solid state system, within novel artificial structures that can be designed having arbitrary dimensionality and shape. The excitations under study are exciton-polaritons in a planar semiconductor microcavity. They are confined within a micron-sized region through lateral trapping of their photon component. Striking signatures of confined states of lower and upper polaritons are found in angle-resolved light emission spectra, where a discrete energy spectrum and broad angular patterns are present. A theoretical model supports unambiguously our observations

    Full configuration interaction approach to the few-electron problem in artificial atoms

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    We present a new high-performance configuration interaction code optimally designed for the calculation of the lowest energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted and correlation becomes dominant. Comparison with previous Quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.Comment: RevTeX 4.0, 18 pages, 6 tables, 9 postscript b/w figures. Final version with new material. Section 6 on the excitation spectrum has been added. Some material has been moved to two appendices, which appear in the EPAPS web depository in the published versio

    Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

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    Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent kâ‹…p{\bf k}\cdot{\bf p} Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.Comment: 4 pages, 4 figure

    Microscopic theory of quantum dot interactions with quantum light: local field effect

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    A theory of both linear and nonlinear electromagnetic response of a single QD exposed to quantum light, accounting the depolarization induced local--field has been developed. Based on the microscopic Hamiltonian accounting for the electron--hole exchange interaction, an effective two--body Hamiltonian has been derived and expressed in terms of the incident electric field, with a separate term describing the QD depolarization. The quantum equations of motion have been formulated and solved with the Hamiltonian for various types of the QD excitation, such as Fock qubit, coherent fields, vacuum state of electromagnetic field and light with arbitrary photonic state distribution. For a QD exposed to coherent light, we predict the appearance of two oscillatory regimes in the Rabi effect separated by the bifurcation. In the first regime, the standard collapse--revivals phenomenon do not reveal itself and the QD population inversion is found to be negative, while in the second one, the collapse--revivals picture is found to be strongly distorted as compared with that predicted by the standard Jaynes-Cummings model. %The model developed can easily be extended to %%electromagnetic excitation. For the case of QD interaction with arbitrary quantum light state in the linear regime, it has been shown that the local field induce a fine structure of the absorbtion spectrum. Instead of a single line with frequency corresponding to which the exciton transition frequency, a duplet is appeared with one component shifted by the amount of the local field coupling parameter. It has been demonstrated the strong light--mater coupling regime arises in the weak-field limit. A physical interpretation of the predicted effects has been proposed.Comment: 14 pages, 7 figure

    Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

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    We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench

    Dephasing in InAs/GaAs quantum dots

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    The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290±80 fs from spectal-hole burning and of 260±20 fs from four-wave mixing

    Ground-State of Charged Bosons Confined in a Harmonic Trap

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    We study a system composed of N identical charged bosons confined in a harmonic trap. Upper and lower energy bounds are given. It is shown in the large N limit that the ground-state energy is determined within an accuracy of ±8\pm 8% and that the mean field theory provides a reasonable result with relative error of less than 16% for the binding energy .Comment: 15 page
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