Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dots

We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single-particle and may-particle wavefunctions. The single-particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wavefunctions is caused by the correlation induced localization: the lowest singlet $^1\Sigma_g$ and triplet $^3\Sigma$ states show that the two electrons are each localized on different dots within the molecule, for the next singlet states $^1\Sigma_u$ both electrons are localized on the same (bottom) dot for interdot separation $d>$ 8 nm. The singlet-triplet splitting is found to be $\sim 0.1$ meV at inter-dot separation $d$=9 nm and as large as 100 meV for $d$=4 nm, orders of magnitude larger than the few meV found in the large (50 - 100 nm) electrostatically confined dots

1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 031114 (2015) and may be found at https://doi.org/10.1063/1.4906451.Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base

Magneto-capacitance probing of the many-particle states in InAs dots

We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information on the quasi-particle wave functions in momentum space for 1 to 6 electrons per dot. For the lowest two energy states, we find a good agreement with Gaussian functions for a harmonic potential. The high energy orbitals exhibit signatures of anisotropic confinement and correlation effects.Comment: 3 pages, 3 figure

Optical imaging of resonant electrical carrier injection into individual quantum dots

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.Comment: 4 page

Carrier Dynamics in Submonolayer InGaAs/GaAs Quantum Dots

Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated 2D InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.Comment: 12 pages, 5 figure

Multi-excitonic complexes in single InGaN quantum dots

Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.Comment: 3 pages, 4 figure

Manifestation of fundamental quantum complementarities in time-domain interference experiments with quantum dots: A theoretical analysis

A theoretical analysis is presented showing that fundamental complementarity between the particle-like properties of an exciton confined in a semiconductor quantum dot and the ability of the same system to show interference may be studied in a time domain interference experiment, similar to those currently performed. The feasibility of such an experiment, including required pulse parameters and the dephasing effect of the environment, is studied.Comment: Final, considerably extended version; 8 pages, 3 figure

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are determined by solving many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nano-template is explored.Comment: 9 pages, 12 figure